Yi Yu, Han Jianing, Li Zhanhai, Cao Shengguo, Zhang Zhenhua
Hunan Provincial Key Laboratory of Flexible Electronic Materials Genome Engineering, Changsha University of Science and Technology, Changsha 410114, China.
Phys Chem Chem Phys. 2024 Feb 7;26(6):5045-5058. doi: 10.1039/d3cp04536f.
Recently, a magnetic semiconducting NiI monolayer was successfully fabricated. To obtain richer magneto-electronic properties and find new physics for NiI, we studied the zigzag-type NiI nanoribbon (ZNiINR) with edges modified by different concentrations of H and/or O atoms. Results show that these ribbons hold a higher energy stability, thermal stability, and magnetic stability, and the Curie temperature can be increased to 143 from 15 K for the bare-edged ribbons. They feature a half-semiconductor, bipolar magnetic semiconductor, or half-metal, depending on the edge-terminated atomic species and concentrations, and are closely related to the ribbon edge states, impurity bands or hybridized bands. By applying strain or an electric field, ribbons can achieve a reversible multi-magnetic phase transition among a bipolar magnetic semiconductor, half-semiconductor, half-metal, and magnetic metal. This is because strain changes the Ni-I bond length, resulting in a variation of bond configurations (weight of ionic and covalent bonds) and the number of unpaired electrons. The compressive strain can increase the Curie temperature because it makes the edged Ni-I-Ni bond angle closer to 90°, leading to the FM d-p-d superexchange interaction being increased. The electric field varies the magnetic phase because it alters the electrostatic potential of the ribbon edges, and the Curie temperature is enhanced under the electric field because the ribbon is changed to a metallic state (half-metal or magnetic metal), in which the magnetic Ni atoms satisfy the Stoner criterion and hold a large magnetic exchange coefficient and electron state density at the Fermi surface.
最近,成功制备了一种磁性半导体NiI单层。为了获得更丰富的磁电性质并发现NiI的新物理特性,我们研究了边缘由不同浓度的H和/或O原子修饰的锯齿形NiI纳米带(ZNiINR)。结果表明,这些纳米带具有更高的能量稳定性、热稳定性和磁稳定性,对于无边缘修饰的纳米带,居里温度可从15 K提高到143 K。它们表现为半半导体、双极磁性半导体或半金属,这取决于边缘终止的原子种类和浓度,并且与纳米带边缘态、杂质带或杂化带密切相关。通过施加应变或电场,纳米带可以在双极磁性半导体、半半导体、半金属和磁性金属之间实现可逆的多磁相转变。这是因为应变改变了Ni-I键长,导致键构型(离子键和共价键的权重)和未成对电子数发生变化。压缩应变可以提高居里温度,因为它使边缘的Ni-I-Ni键角更接近90°,导致铁磁d-p-d超交换相互作用增强。电场改变磁相是因为它改变了纳米带边缘的静电势,并且在电场下居里温度升高是因为纳米带转变为金属态(半金属或磁性金属),其中磁性Ni原子满足斯托纳准则并且在费米表面具有大的磁交换系数和电子态密度。