Yun Seong-Yun, Han Joon-Kyu, Choi Yang-Kyu
School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
System Semiconductor Engineering and Department of Electronic Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul 04107, Republic of Korea.
Nano Lett. 2024 Mar 6;24(9):2751-2757. doi: 10.1021/acs.nanolett.3c04539. Epub 2024 Jan 23.
Coupled oscillators construct an oscillatory neural network (ONN) by mimicking the interactions among neurons in the human brain. This work demonstrates a fully CMOS-based oscillator consisting of a bistable resistor (biristor), which shares a structure identical with that of a metal-oxide-semiconductor field-effect transistor, except for the use of a gate electrode. The biristor-based oscillator (birillator) generates oscillating voltage signals in the form of spikes due to a single transistor latch phenomenon. When two birillators are connected with a coupling capacitor, they become synchronized with a phase difference of 180°. These coupled oscillation characteristics are experimentally investigated for an ONN. As practical applications of the ONN with coupled birillators, edge detection and vertex coloring are conducted by encoding information into phase differences between them. The proposed fully CMOS-based birillators are advantageous for low power consumption, high CMOS compatibility, and a compact footprint area.
耦合振荡器通过模拟人脑中神经元之间的相互作用构建了一个振荡神经网络（ONN）。这项工作展示了一种基于全CMOS的振荡器，它由一个双稳态电阻器（双稳态晶体管）组成，该双稳态电阻器除了使用栅极电极外，其结构与金属氧化物半导体场效应晶体管的结构相同。基于双稳态晶体管的振荡器（双稳态振荡器）由于单晶体管锁存现象而产生尖峰形式的振荡电压信号。当两个双稳态振荡器通过耦合电容连接时，它们会以180°的相位差同步。针对ONN对这些耦合振荡特性进行了实验研究。作为具有耦合双稳态振荡器的ONN的实际应用，通过将信息编码为它们之间的相位差来进行边缘检测和顶点着色。所提出的基于全CMOS的双稳态振荡器在低功耗、高CMOS兼容性和紧凑的占地面积方面具有优势。
