Kim Eunseong, Lim Doohyeok
School of Electronic Engineering, Kyonggi University, Suwon 16227, Republic of Korea.
Micromachines (Basel). 2023 Nov 28;14(12):2165. doi: 10.3390/mi14122165.
In this study, we investigate the temperature-dependent electrical characteristics of bistable silicon resistors (biristors) at temperatures ranging from 275 to 400 K. The proposed biristor exhibits low latch voltages owing to the surface accumulation layer transistor concept. Moreover, the biristor was abruptly turned on and off by positive and negative feedback phenomena, respectively. As the temperature increased from 275 to 400 K, the latch-up voltage decreased from 2.131 to 1.696 V, while the latch-down voltage increased from 1.486 to 1.637 V. Mechanisms of temperature-dependent change in latch voltage were analyzed using energy band diagrams. This temperature-dependent analysis on silicon biristor can serve as blueprint for the contribution of stable operation.
在本研究中，我们研究了双稳态硅电阻器（双稳电阻器）在275至400 K温度范围内的温度相关电学特性。所提出的双稳电阻器由于表面积累层晶体管概念而具有低锁存电压。此外，双稳电阻器分别通过正反馈和负反馈现象突然导通和关断。当温度从275 K升高到400 K时，闩锁电压从2.131 V降至1.696 V，而闩锁关断电压从1.486 V升至1.637 V。利用能带图分析了锁存电压随温度变化的机制。这种对硅双稳电阻器的温度相关分析可为稳定运行的贡献提供蓝图。
