Zhang Xinhao, Chen Shuo, Ma Heqi, Sun Tianyu, Cui Xiangyong, Huo Panpan, Man Baoyuan, Yang Cheng
School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
Shandong Provincial Engineering and Technical Center of Light Manipulations, Shandong Normal University, Jinan 250014, China.
Nanomaterials (Basel). 2024 Jan 20;14(2):226. doi: 10.3390/nano14020226.
Field-effect transistor (FET) biosensors can be used to measure the charge information carried by biomolecules. However, insurmountable hysteresis in the long-term and large-range transfer characteristic curve exists and affects the measurements. Noise signal, caused by the interference coefficient of external factors, may destroy the quantitative analysis of trace targets in complex biological systems. In this report, a "rectified signal" in the output characteristic curve, instead of the "absolute value signal" in the transfer characteristic curve, is obtained and analyzed to solve these problems. The proposed asymmetric Schottky barrier-generated MoS/WTe FET biosensor achieved a 10 rectified signal, sufficient reliability and stability (maintained for 60 days), ultra-sensitive detection (10 aM) of the Down syndrome-related DYRK1A gene, and excellent specificity in base recognition. This biosensor with a response range of 10 aM-100 pM has significant application potential in the screening and rapid diagnosis of Down syndrome.
场效应晶体管(FET)生物传感器可用于测量生物分子携带的电荷信息。然而,长期和大范围转移特性曲线中存在无法克服的滞后现象,影响测量结果。由外部因素干扰系数引起的噪声信号,可能会破坏复杂生物系统中痕量目标的定量分析。在本报告中,通过获取并分析输出特性曲线中的“整流信号”,而非转移特性曲线中的“绝对值信号”来解决这些问题。所提出的非对称肖特基势垒产生的MoS/WTe FET生物传感器实现了10倍整流信号、足够的可靠性和稳定性(保持60天)、对唐氏综合征相关DYRK1A基因的超灵敏检测(10 aM)以及碱基识别方面的优异特异性。这种响应范围为10 aM - 100 pM的生物传感器在唐氏综合征的筛查和快速诊断中具有显著的应用潜力。