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通过调节CeO的还原性理解和控制负载型Cu团簇中单原子位点的形成:关于Gd掺杂对电子金属-载体相互作用影响的理论见解。

Understanding and controlling the formation of single-atom site from supported Cu cluster by tuning CeO reducibility: Theoretical insight into the Gd-doping effect on electronic metal-support interaction.

作者信息

Liu Dongyuan, Zhu Houyu, Gong Xiaoxiao, Yuan Saifei, Ma Hao, He Ping, Fan Yucheng, Zhao Wen, Ren Hao, Guo Wenyue

机构信息

School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, Shandong 266580, PR China.

School of Materials Science and Engineering, China University of Petroleum (East China), Qingdao, Shandong 266580, PR China.

出版信息

J Colloid Interface Sci. 2024 May;661:720-729. doi: 10.1016/j.jcis.2024.01.174. Epub 2024 Feb 1.

Abstract

Controlling the formation of single-atom (SA) sites from supported metal clusters is an important and interesting issue to effectively improve the catalytic performance of heterogeneous catalysts. For extensively studied CO oxidation over metal/CeO systems, the SA formation and stabilization under reaction conditions is generally attributed to CO adsorption, however, the pivotal role played by the reducible CeO support and the underlying electronic metal-support interaction (EMSI) are not yet fully understood. Based on a ceria-supported Cu catalyst model, we performed density functional theory calculations to investigate the intrinsic SA formation mechanism and discussed the synergistic effect of Gd-doped CeO and CO adsorption on the SA formation. The CeO reducibility is tuned with doped Gd content ranging from 12.5 % ∼ 25 %. Based on ab initio thermodynamic and ab initio molecular dynamics, the critical condition for SA formation was identified as 21.875 % Gd-doped CeO with CO-saturated adsorption on Cu. Electronic analysis revealed that the open-shell lattice O (δ < 2) generated by Gd doping facilitates the charge transfer from the bottom-corner Cu (Cu) to CeO. The CO-saturated adsorption further promotes this charge transfer process and enhances the EMSI between Cu and CeO, leading to the disintegration of Cu from Cu and subsequent formation of the active SA site.

摘要

控制负载型金属簇形成单原子(SA)位点是有效提高多相催化剂催化性能的一个重要且有趣的问题。对于在金属/CeO体系上广泛研究的CO氧化反应,反应条件下单原子的形成和稳定通常归因于CO吸附,然而,可还原的CeO载体所起的关键作用以及潜在的电子金属-载体相互作用(EMSI)尚未得到充分理解。基于氧化铈负载的铜催化剂模型,我们进行了密度泛函理论计算,以研究单原子形成的内在机制,并讨论了钆掺杂的CeO和CO吸附对单原子形成的协同作用。通过掺杂钆含量在12.5%至25%范围内来调节CeO的还原性。基于从头算热力学和从头算分子动力学,确定单原子形成的临界条件为21.875%钆掺杂的CeO且CO在铜上饱和吸附。电子分析表明,钆掺杂产生的开壳层晶格氧(δ<2)促进了电荷从底角铜(Cu)向CeO的转移。CO饱和吸附进一步促进了这一电荷转移过程,并增强了铜与CeO之间的EMSI,导致Cu从Cu上解离,随后形成活性单原子位点。

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