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高结晶性且具荧光的硼二吡咯(BODIPY)标记的苯基三唑香豆素作为用于有机场效应晶体管(OFET)器件的n型半导体材料。

Highly crystalline and fluorescent BODIPY-labelled phenyl-triazole-coumarins as -type semiconducting materials for OFET devices.

作者信息

Emilio de la Cerda-Pedro José, Hernández-Ortiz Oscar Javier, Vázquez-García Rosa Angeles, García-Báez Efrén V, Gómez-Aguilar Ramón, Espinosa-Roa Arián, Farfán Norberto, Padilla-Martínez Itzia I

机构信息

Laboratorio de Química Supramolecular y Nanociencias de la Unidad Profesional Interdisciplinaria de Biotecnología del Instituto Politécnico Nacional, Av. Acueducto s/n Barrio la laguna Ticomán, 07340, Ciudad de Mexico, Mexico.

Área Académica de Ciencias de la Tierra y Materiales, Universidad Autónoma del Estado de Hidalgo, km. 4.5 Carretera Pachuca-Tulancingo, Col. Carboneras 42184, Mineral de la Reforma, Hidalgo Mexico.

出版信息

Heliyon. 2023 Dec 10;10(1):e23517. doi: 10.1016/j.heliyon.2023.e23517. eCollection 2024 Jan 15.

Abstract

In this work, the synthesis of BODIPY-phenyl-triazole labelled coumarins (BPhTCs) using a two-step approach is described. The influence of the BODIPY appending on the photophysical, electrochemical and thermal properties of the phenyl-triazole-coumarin precursors (PhTCs) was investigated. Band gap energies were measured by absorption spectroscopy (2.20 ± 0.02 eV in the solid and 2.35 ± 0.01 eV in solution) and cyclic voltammetry (2.10 ± 0.05 eV). The results are supported by DFT calculations confirming the presence of lowest LUMO levels that facilitate the electron injection and stabilize the electron transport. Their charge-transport parameters were measured in Organic Field-Effect Transistor (OFET) devices. BPhTCs showed an ambipolar transistor behavior with good n-type charge mobilities (10 cmVs) allowing these derivatives to be employed as promising semiconducting crystalline and fluorescent materials with good thermal and air stability up to 250 °C.

摘要

在这项工作中,描述了使用两步法合成硼二吡咯-苯基-三唑标记的香豆素(BPhTCs)。研究了硼二吡咯的连接对苯基-三唑-香豆素前体(PhTCs)的光物理、电化学和热性质的影响。通过吸收光谱法(固体中为2.20±0.02 eV,溶液中为2.35±0.01 eV)和循环伏安法(2.10±0.05 eV)测量带隙能量。密度泛函理论(DFT)计算结果支持了这些结果,证实了存在促进电子注入并稳定电子传输的最低最低未占分子轨道(LUMO)能级。在有机场效应晶体管(OFET)器件中测量了它们的电荷传输参数。BPhTCs表现出双极性晶体管行为,具有良好的n型电荷迁移率(10 cmVs),使得这些衍生物能够用作有前景的半导体晶体和荧光材料,在高达250°C的温度下具有良好的热稳定性和空气稳定性。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/11ea/10851223/c7c3d4c48edc/gr1.jpg

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