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缺陷赛道中椭圆磁斯格明子的动力学

Dynamics of Elliptical Magnetic Skyrmion in Defective Racetrack.

作者信息

Zhu Huangkun, Xiang Gang, Feng Youhua, Zhang Xi

机构信息

College of Physics, Sichuan University, Chengdu 610065, China.

出版信息

Nanomaterials (Basel). 2024 Feb 4;14(3):312. doi: 10.3390/nano14030312.

Abstract

Recently, it has been reported that the skyrmion Hall effect can be suppressed in an elliptical skyrmion-based device. Given that defects are unavoidable in materials, it is necessary and important to investigate the dynamics of an elliptical skyrmion in a defective racetrack device. In this work, the current-driven dynamics of an elliptical skyrmion in a defective racetrack device are systematically studied using micromagnetic simulations. The system energy analysis reveals that the magnetic parameters of the circular defect play critical roles in determining the type (repulsive or attractive) and the magnitude of the force on the elliptical skyrmion. The simulated trajectories show that the primary motion modes of the elliptical skyrmion in the defective racetrack can be divided into four types, which are dependent on the values of the Dzyaloshinskii-Moriya interaction (DMI) constant , the perpendicular magnetic anisotropy constant , the magnitude of the driving current density , and the size of the defect. Further investigation of the motion-mode phases of the skyrmion reveals the synthetic effects of , , and . Finally, the minimum depinning current density , which linearly depends on the parameters of and , is obtained for a skyrmion completely pinned in the defect. Our findings give insights into the dynamics of an elliptical skyrmion in the presence of a defect with different magnetic parameters in a racetrack device and may be useful for performance enhancement of skyrmion-based racetrack memory devices.

摘要

最近,有报道称在基于椭圆斯格明子的器件中,斯格明子霍尔效应可以被抑制。鉴于材料中缺陷不可避免,研究缺陷跑道型器件中椭圆斯格明子的动力学是必要且重要的。在这项工作中,利用微磁模拟系统地研究了缺陷跑道型器件中椭圆斯格明子的电流驱动动力学。系统能量分析表明,圆形缺陷的磁参数在确定作用于椭圆斯格明子的力的类型(排斥或吸引)和大小方面起着关键作用。模拟轨迹表明,缺陷跑道中椭圆斯格明子的主要运动模式可分为四种类型,这取决于Dzyaloshinskii-Moriya相互作用(DMI)常数、垂直磁各向异性常数、驱动电流密度大小以及缺陷尺寸。对斯格明子运动模式相的进一步研究揭示了、、和的综合效应。最后,对于完全被钉扎在缺陷中的斯格明子,获得了线性依赖于和参数的最小去钉扎电流密度。我们的研究结果为在跑道型器件中存在具有不同磁参数缺陷的情况下椭圆斯格明子动力学提供了见解,并且可能有助于提高基于斯格明子的跑道型存储器件的性能。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/0638/10857043/11a97a47285a/nanomaterials-14-00312-g001.jpg

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