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合金化增强二维氮化铝镓(AlGaN)中的负泊松比。

Alloying enhanced negative Poisson's ratio in two-dimensional aluminum gallium nitride (AlGaN).

作者信息

Wang Xiaoxia, Tang Zhunyun, Yu Linfeng, Wei Donghai, Yuan Zonghao, Tang Chao, Wang Huimin, Ouyang Tao, Qin Guangzhao

机构信息

School of Physics and Optoelectronics and Hunan Key Laboratory for Micro-Nano Energy Materials & Device, Xiangtan University, Xiangtan 411105, Hunan, China.

National Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, P. R. China.

出版信息

Phys Chem Chem Phys. 2024 Feb 22;26(8):7010-7019. doi: 10.1039/d3cp05031a.

Abstract

The negative Poisson's ratio (NPR) effect usually endows materials with promising ductility and shear resistance, facilitating a wider range of applications. It has been generally acknowledged that alloys show strong advantages in manipulating material properties. Thus, a thought-provoking question arises: how does alloying affect the NPR? In this paper, based on first-principles calculations, we systematically study the NPR in two-dimensional (2D) GaN and AlN, and their alloy of AlGaN. It is intriguing to find that the NPR in AlGaN is significantly enhanced compared to the parent materials of GaN and AlN. The underlying mechanism mainly originates from a counter-intuitive increase of the bond angle . We further study the microscopic origin of the anomalies by electron orbital analysis as well as electron localization functions. It is revealed that the distribution and movement of electrons change with the applied strain, providing a fundamental view on the effect of strain on lattice parameters and the NPR. The physical origin as revealed in this study deepens the understanding of the NPR and shed light on the future design of modern nanoscale electromechanical devices with fantastic functions based on the auxetic nanomaterials and nanostructures.

摘要

负泊松比(NPR)效应通常赋予材料良好的延展性和抗剪性,从而拓展其应用范围。人们普遍认为合金在调控材料性能方面具有显著优势。因此,一个引人深思的问题出现了:合金化如何影响负泊松比?本文基于第一性原理计算,系统地研究了二维(2D)氮化镓(GaN)、氮化铝(AlN)及其合金氮化铝镓(AlGaN)中的负泊松比。有趣的是,与GaN和AlN母体材料相比,AlGaN中的负泊松比显著增强。其潜在机制主要源于键角的反常增大。我们通过电子轨道分析以及电子定域函数进一步研究了这些反常现象的微观起源。结果表明,电子的分布和运动随外加应变而变化,这为应变对晶格参数和负泊松比的影响提供了一个基本观点。本研究揭示的物理起源加深了对负泊松比的理解,并为基于负泊松比纳米材料和纳米结构的具有奇特功能的现代纳米级机电装置的未来设计提供了思路。

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