Jiménez-Guerra Maykel, Calvo-Barrio Lorenzo, Asensi Jose Miguel, Caño-Prades Ivan, Yan Shunya, Barrena Esther, Puigdollers Joaquim, Jehl Zacharie, Sánchez Yudania, Saucedo Edgardo
Electronic Engineering Department, Universitat Politècnica de Catalunya (UPC), Photovoltaic Lab - Micro and Nano Technologies Group (MNT), EEBE, Av Eduard Maristany 10-14, Barcelona 08019, Catalonia, Spain.
Barcelona Center for Multiscale Science & Engineering, Universitat Politècnica de Catalunya (UPC), Av Eduard Maristany 10-14, Barcelona 08019, Catalonia, Spain.
ACS Appl Energy Mater. 2024 Jan 22;7(3):874-884. doi: 10.1021/acsaem.3c01584. eCollection 2024 Feb 12.
Recent developments in SbSe van der Waals material as an absorber candidate for thin film photovoltaic applications have demonstrated the importance of surface management for improving the conversion efficiency of this technology. SbSe thin films' versatility in delivering good efficiencies in both superstrate and substrate configurations, coupled with a compatibility with various low-temperature deposition techniques (below 500 °C and often below 350 °C), makes them highly attractive for advanced photovoltaic applications. This study presents a comparative analysis of the most effective chemical etchings developed for related thin film chalcogenide technologies to identify and understand the most appropriate surface chemical treatments for SbSe in substrate configuration, synthesized using a sequential process at very low temperatures (320 °C). Eight different chemical etchings were tested and investigated, and the results show that only KCN-based solutions lead to an improvement in the solar cell's performance, primarily due to an increase in the fill factor. Surface analysis of the samples shows that KCN etching produces very Sb-rich surfaces that do not affect the properties of the bulk. It is proposed that this Sb-rich interface inverts the surface polarity, creating a "buried junction" with CdS, thereby explaining the improvement of the fill factor of the devices, as confirmed by device modeling. The results of this study underscore the importance of surface management in low-temperature synthesized SbSe absorbers, where Sb-rich interfaces are crucial for achieving high-efficiency devices. This research contributes to ongoing efforts to improve the performance of SbSe thin film photovoltaic technology and could pave the way for the development of more efficient solar cells with optimized interfaces.
作为薄膜光伏应用吸收体候选材料的SbSe范德华材料的最新进展表明,表面管理对于提高该技术的转换效率至关重要。SbSe薄膜在超strate和衬底配置中均能实现良好的效率,并且与各种低温沉积技术(低于500°C,通常低于350°C)兼容,这使其在先进光伏应用中极具吸引力。本研究对为相关薄膜硫族化物技术开发的最有效的化学蚀刻方法进行了比较分析,以识别和理解在衬底配置中使用非常低的温度(320°C)通过顺序工艺合成的SbSe最合适的表面化学处理方法。测试并研究了八种不同的化学蚀刻方法,结果表明,只有基于KCN的溶液能提高太阳能电池的性能,这主要归因于填充因子的增加。对样品的表面分析表明,KCN蚀刻产生非常富Sb的表面,且不会影响体材料的性能。据推测,这种富Sb界面会反转表面极性,与CdS形成“掩埋结”,从而解释了器件填充因子的提高,器件建模也证实了这一点。本研究结果强调了表面管理在低温合成SbSe吸收体中的重要性,其中富Sb界面对于实现高效器件至关重要。这项研究有助于持续努力提高SbSe薄膜光伏技术的性能,并可能为开发具有优化界面的更高效太阳能电池铺平道路。