Duan Zhaoteng, Liang Xiaoyang, Feng Yang, Ma Haiya, Liang Baolai, Wang Ying, Luo Shiping, Wang Shufang, Schropp Ruud E I, Mai Yaohua, Li Zhiqiang
National-Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Institute of Life Science and Green Development, Hebei University, Baoding, 071002, China.
Institute of New Energy Technology, College of Information Science and Technology, Jinan University, Guangzhou, 510632, China.
Adv Mater. 2022 Jul;34(30):e2202969. doi: 10.1002/adma.202202969. Epub 2022 Jun 20.
Binary Sb Se semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, Sb Se solar cells suffer from complex and unconventional intrinsic defects due to the low symmetry of the quasi-1D crystal structure resulting in a considerable voltage deficit, which limits the ultimate power conversion efficiency (PCE). In this work, the creation of compact Sb Se films with strong [00l] orientation, high crystallinity, minimal deep level defect density, fewer trap states, and low non-radiative recombination loss by injection vapor deposition is reported. This deposition technique enables superior films compared with close-spaced sublimation and coevaporation technologies. The resulting Sb Se thin-film solar cells yield a PCE of 10.12%, owing to the suppressed carrier recombination and excellent carrier transport and extraction. This method thus opens a new and effective avenue for the fabrication of high-quality Sb Se and other high-quality chalcogenide semiconductors.
二元锑硒半导体因其具有吸引人的各向异性光电特性，有望成为无机硫族化合物光伏电池中的吸收层材料。然而，由于准一维晶体结构的低对称性，锑硒太阳能电池存在复杂且非常规的本征缺陷，导致相当大的电压损失，这限制了最终的功率转换效率（PCE）。在这项工作中，报道了通过注入气相沉积法制备具有强[00l]取向、高结晶度、最小的深能级缺陷密度、较少的陷阱态以及低非辐射复合损失的致密锑硒薄膜。与近距离升华和共蒸发技术相比，这种沉积技术能够制备出更优质的薄膜。所得的锑硒薄膜太阳能电池的功率转换效率达到10.12%，这得益于载流子复合的抑制以及优异的载流子传输和提取性能。因此，该方法为高质量锑硒及其他高质量硫族化合物半导体的制备开辟了一条新的有效途径。
