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电子辅助下在 Kagome 晶格 TbMnSn 中斯格明子气泡的产生与直线运动

Electron-Assisted Generation and Straight Movement of Skyrmion Bubble in Kagome TbMnSn.

作者信息

Li Zhuolin, Yin Qiangwei, Lv Wenxin, Shen Jun, Wang Shouguo, Zhao Tongyun, Cai Jianwang, Lei Hechang, Lin Shi-Zeng, Zhang Ying, Shen Baogen

机构信息

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 101408, China.

出版信息

Adv Mater. 2024 May;36(19):e2309538. doi: 10.1002/adma.202309538. Epub 2024 Feb 26.

Abstract

Topological magnetic textures are promising candidates as binary data units for the next-generation memory device. The precise generation and convenient control of nontrivial spin topology at zero field near room temperature endows the critical advantages in skyrmionic devices but is not simultaneously integrated into one material. Here, in the Kagome plane of quantum TbMnSn, the expedient generation of the skyrmion bubbles in versatile forms of lattice, chain, and isolated one by converging the electron beam, where the electron intensity gradient contributes to the dynamic generation from local anisotropy variation near spin reorientation transition (SRT) is reported. Encouragingly, by utilizing the dynamic shift of the SRT domain interface, the straight movement is actualized with the skyrmion bubble slave to the SRT domain interface forming an elastic composite object, avoiding the usual deflection from the skyrmion Hall effect. The critical contribution of the SRT domain interface via conveniently electron-assisted heating is further theoretically validated in micromagnetic simulation, highlighting the compatible application possibility in advanced devices.

摘要

拓扑磁纹理有望成为下一代存储设备的二进制数据单元。在室温附近的零磁场下精确生成和方便控制非平凡自旋拓扑结构,赋予了斯格明子器件关键优势,但尚未同时集成到一种材料中。在此,在量子TbMnSn的 Kagome 平面中,通过汇聚电子束,以晶格、链和孤立等多种形式方便地生成斯格明子气泡,其中电子强度梯度有助于在自旋重取向转变(SRT)附近通过局部各向异性变化实现动态生成。令人鼓舞的是,通过利用SRT畴界面的动态移动,斯格明子气泡跟随SRT畴界面实现直线运动,形成弹性复合物体,避免了通常因斯格明子霍尔效应产生的偏转。通过方便的电子辅助加热,SRT畴界面的关键作用在微磁模拟中得到进一步理论验证,突出了其在先进器件中的兼容应用可能性。

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