• 文献检索
  • 文档翻译
  • 深度研究
  • 学术资讯
  • Suppr Zotero 插件Zotero 插件
  • 邀请有礼
  • 套餐&价格
  • 历史记录
应用&插件
Suppr Zotero 插件Zotero 插件浏览器插件Mac 客户端Windows 客户端微信小程序
定价
高级版会员购买积分包购买API积分包
服务
文献检索文档翻译深度研究API 文档MCP 服务
关于我们
关于 Suppr公司介绍联系我们用户协议隐私条款
关注我们

Suppr 超能文献

核心技术专利:CN118964589B侵权必究
粤ICP备2023148730 号-1Suppr @ 2026

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验

通过亚单层氧化镁原子层沉积薄膜控制铂纳米颗粒烧结

Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin films.

作者信息

Zhang Zhiwei, Filez Matthias, Solano Eduardo, Poonkottil Nithin, Li Jin, Minjauw Matthias M, Poelman Hilde, Rosenthal Martin, Brüner Philipp, Galvita Vladimir V, Detavernier Christophe, Dendooven Jolien

机构信息

Conformal Coating of Nanomaterials (CoCooN), Department of Solid State Sciences, Ghent University, Krijgslaan 281/S1, 9000 Ghent, Belgium.

Centre for Membrane Separations Adsorption Catalysis and Spectroscopy for Sustainable Solutions (cMACS), KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium.

出版信息

Nanoscale. 2024 Mar 7;16(10):5362-5373. doi: 10.1039/d3nr05884k.

DOI:10.1039/d3nr05884k
PMID:38375669
Abstract

Metal nanoparticle (NP) sintering is a major cause of catalyst deactivation, as NP growth reduces the surface area available for reaction. A promising route to halt sintering is to deposit a protective overcoat on the catalyst surface, followed by annealing to generate overlayer porosity for gas transport to the NPs. Yet, such a combined deposition-annealing approach lacks structural control over the cracked protection layer and the number of NP surface atoms available for reaction. Herein, we exploit the tailoring capabilities of atomic layer deposition (ALD) to deposit MgO overcoats on archetypal Pt NP catalysts with thicknesses ranging from sub-monolayers to nm-range thin films. Two different ALD processes are studied for the growth of MgO overcoats on Pt NPs anchored on a SiO support, using Mg(EtCp) and HO, and Mg(TMHD) and O, respectively. Spectroscopic ellipsometry and X-ray photoelectron spectroscopy measurements reveal significant growth on both SiO and Pt for the former process, while the latter exhibits a drastically lower growth per cycle with an initial chemical selectivity towards Pt. These differences in MgO growth characteristics have implications for the availability of uncoated Pt surface atoms at different stages of the ALD process, as probed by low energy ion scattering, and for the sintering behavior during O annealing, as monitored with grazing incidence small angle X-ray scattering ( GISAXS). The Mg(TMHD)-O ALD process enables exquisite coverage control allowing a balance between physically blocking the Pt surface to prevent sintering and keeping Pt surface atoms free for reaction. This approach avoids the need for post-annealing, hence also safeguarding the structural integrity of the as-deposited overcoat.

摘要

金属纳米颗粒(NP)烧结是催化剂失活的主要原因,因为NP的生长会减少可用于反应的表面积。一种有前景的阻止烧结的方法是在催化剂表面沉积一层保护涂层,然后进行退火以产生覆盖层孔隙,以便气体传输到NP。然而,这种沉积 - 退火组合方法对破裂的保护层以及可用于反应的NP表面原子数量缺乏结构控制。在此,我们利用原子层沉积(ALD)的定制能力,在典型的Pt NP催化剂上沉积MgO覆盖层,其厚度范围从亚单层到纳米级薄膜。研究了两种不同的ALD工艺,分别使用Mg(EtCp)和HO以及Mg(TMHD)和O,在锚定在SiO载体上的Pt NPs上生长MgO覆盖层。椭圆偏振光谱和X射线光电子能谱测量表明,前一种工艺在SiO和Pt上都有显著生长,而后一种工艺每循环的生长速率极低,且对Pt具有初始化学选择性。MgO生长特性的这些差异对ALD过程不同阶段未涂层Pt表面原子的可用性(通过低能离子散射探测)以及O退火期间的烧结行为(用掠入射小角X射线散射(GISAXS)监测)都有影响。Mg(TMHD)-O ALD工艺能够实现精确的覆盖控制,在物理上阻挡Pt表面以防止烧结和保持Pt表面原子可用于反应之间实现平衡。这种方法避免了后退火的需要,因此也保护了沉积后覆盖层的结构完整性。

相似文献

1
Controlling Pt nanoparticle sintering by sub-monolayer MgO ALD thin films.通过亚单层氧化镁原子层沉积薄膜控制铂纳米颗粒烧结
Nanoscale. 2024 Mar 7;16(10):5362-5373. doi: 10.1039/d3nr05884k.
2
In situ study of the thermal stability of supported Pt nanoparticles and their stabilization via atomic layer deposition overcoating.负载型铂纳米颗粒热稳定性的原位研究及其通过原子层沉积包覆实现的稳定化
Nanoscale. 2020 Jun 4;12(21):11684-11693. doi: 10.1039/d0nr02444a.
3
Surface mobility and impact of precursor dosing during atomic layer deposition of platinum: in situ monitoring of nucleation and island growth.铂原子层沉积过程中前驱体剂量的表面迁移率及影响:成核与岛状生长的原位监测
Phys Chem Chem Phys. 2020 Nov 21;22(43):24917-24933. doi: 10.1039/d0cp03563g. Epub 2020 Nov 2.
4
Area-selective atomic layer deposition of Ru on electron-beam-written Pt(C) patterns versus SiO substratum.选区原子层沉积 Ru 在电子束写入的 Pt(C)图案与 SiO 衬底上。
Nanotechnology. 2017 Sep 27;28(39):395301. doi: 10.1088/1361-6528/aa8844. Epub 2017 Aug 24.
5
Control of thickness and chemical properties of atomic layer deposition overcoats for stabilizing Cu/γ-Al2 O3 catalysts.用于稳定Cu/γ-Al₂O₃催化剂的原子层沉积外涂层的厚度和化学性质控制
ChemSusChem. 2014 Dec;7(12):3247-51. doi: 10.1002/cssc.201402832. Epub 2014 Sep 25.
6
High-temperature catalytic reforming of n-hexane over supported and core-shell Pt nanoparticle catalysts: role of oxide-metal interface and thermal stability.担载型和核壳型 Pt 纳米颗粒催化剂上正己烷的高温催化重整:氧化物-金属界面和热稳定性的作用。
Nano Lett. 2014 Aug 13;14(8):4907-12. doi: 10.1021/nl502434m. Epub 2014 Aug 1.
7
Low-Temperature Atomic Layer Deposition of Highly Conformal Tin Nitride Thin Films for Energy Storage Devices.低温原子层沉积法制备用于储能器件的高保形氮化锡薄膜。
ACS Appl Mater Interfaces. 2019 Nov 20;11(46):43608-43621. doi: 10.1021/acsami.9b15790. Epub 2019 Nov 5.
8
Synthesis and stabilization of supported metal catalysts by atomic layer deposition.原子层沉积法合成和稳定负载型金属催化剂。
Acc Chem Res. 2013 Aug 20;46(8):1806-15. doi: 10.1021/ar300229c. Epub 2013 Mar 12.
9
Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition.通过原子层沉积稳定用于液相反应的铜催化剂。
Angew Chem Int Ed Engl. 2013 Dec 16;52(51):13808-12. doi: 10.1002/anie.201308245. Epub 2013 Nov 26.
10
Area-Selective Atomic Layer Deposition of ZnO on Si\SiO Modified with Tris(dimethylamino)methylsilane.在经三(二甲基氨基)甲基硅烷改性的Si\SiO上进行ZnO的区域选择性原子层沉积
Materials (Basel). 2023 Jun 29;16(13):4688. doi: 10.3390/ma16134688.

引用本文的文献

1
The Chemical Nature of the Oxide Directs the Stability and Reactivity of Copper|Oxide Interfaces in the Electrochemical CO Reduction Reaction.氧化物的化学性质决定了电化学CO还原反应中铜|氧化物界面的稳定性和反应活性。
Chem Mater. 2025 Apr 24;37(9):3343-3352. doi: 10.1021/acs.chemmater.5c00135. eCollection 2025 May 13.
2
Low-Temperature Bonding for Heterogeneous Integration of Silicon Chips with Nanocrystalline Diamond Films.用于硅芯片与纳米晶金刚石薄膜异质集成的低温键合
Micromachines (Basel). 2024 Nov 28;15(12):1436. doi: 10.3390/mi15121436.