Lu Xiaoling, Zhang Lei
State Key Laboratory of Dynamic Measurement Technology, North University of China, Taiyuan 030051, China.
Key Laboratory of Micro/Nano Devices and Systems, Ministry of Education, North University of China, Taiyuan 030051, China.
Micromachines (Basel). 2024 Jan 31;15(2):215. doi: 10.3390/mi15020215.
In this work, the electromagnetic properties of NiCuZnFeO (NiCuZn) ferrites doped with 0.3 wt% BiO + CuO flux ( = 0.2, 0.4, 0.6, and 0.8 wt%) were studied. Doping resulted in a reduction in the sintering temperature to 900 °C. The doped ferrites were synthesized via the solid-state method. XRD patterns revealed that the prepared ferrites had a cubic spinel structure; thus, a moderate addition of flux did not change the crystal structure. The SEM images, as well as the density and grain size distribution of the samples, showed that the NiCuZn ferrites had densified, homogenized, and contained fully grown grains for = 0.6 wt%. The sample exhibited good soft magnetic properties, with μ' reaching the maximum value of 245.4 for = 0.6 wt% and ε', , and reaching the maximum values of 23.1, 28.06 emu/g, and 45.86 Oe for = 0.8 wt%, respectively. Furthermore, the ferrites exhibited good gyromagnetic properties, with reaching the maximum value of 1744 Gauss for = 0.8 wt% and ΔH reaching the minimum value of 228 Oe for = 0.6 wt%. NiCuZn ferrites were successfully sintered at a lower temperature (900 °C) by adding BiO-CuO flux through LTCC technology and exhibited good soft magnetic properties and gyromagnetic properties. We envisage that these ferrites could be used in multilayer devices.
在本研究中,对掺杂0.3 wt% BiO + CuO助熔剂(= 0.2、0.4、0.6和0.8 wt%)的NiCuZnFeO(NiCuZn)铁氧体的电磁性能进行了研究。掺杂使烧结温度降低至900°C。通过固态法合成了掺杂铁氧体。XRD图谱表明,制备的铁氧体具有立方尖晶石结构;因此,适量添加助熔剂不会改变晶体结构。SEM图像以及样品的密度和晶粒尺寸分布表明,对于 = 0.6 wt%的情况,NiCuZn铁氧体已经致密化、均匀化且包含完全生长的晶粒。该样品表现出良好的软磁性能,对于 = 0.6 wt%,μ'达到最大值245.4,对于 = 0.8 wt%,ε'、 分别达到最大值23.1、28.06 emu/g和45.86 Oe。此外,铁氧体表现出良好的旋磁性能,对于 = 0.8 wt%, 达到最大值1744高斯,对于 = 0.6 wt%,ΔH达到最小值228 Oe。通过低温共烧陶瓷(LTCC)技术添加BiO - CuO助熔剂,NiCuZn铁氧体在较低温度(900°C)下成功烧结,并表现出良好的软磁性能和旋磁性能。我们设想这些铁氧体可用于多层器件。