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通过大应变梯度揭示二维铁电体CuInPS中的强挠曲电效应和光电耦合

Revealing Strong Flexoelectricity and Optoelectronic Coupling in 2D Ferroelectric CuInPS Via Large Strain Gradient.

作者信息

Wu Xiaokeng, Qi Lu, Iqbal Muhammad Ahsan, Dai Sichao, Weng Xiaoliang, Wu Kewen, Kang Chenxu, Li Zelong, Zhao Duo, Tang Wei, Zhuge Fuwei, Zhai Tianyou, Ruan Shuangchen, Zeng Yu-Jia

机构信息

Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, P. R. China.

Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, Shenzhen Technology University, Shenzhen 518118, P. R. China.

出版信息

ACS Appl Mater Interfaces. 2024 Mar 20;16(11):14038-14046. doi: 10.1021/acsami.3c18678. Epub 2024 Mar 6.

Abstract

The interplay between flexoelectric and optoelectronic characteristics provides a paradigm for studying emerging phenomena in various 2D materials. However, an effective way to induce a large and tunable strain gradient in 2D devices remains to be exploited. Herein, we propose a strategy to induce large flexoelectric effect in 2D ferroelectric CuInPS by constructing a 1D-2D mixed-dimensional heterostructure. The strong flexoelectric effect is induced by enormous strain gradient up to 4.2 × 10 m resulting from the underlying ZnO nanowires, which is further confirmed by the asymmetric coercive field and the red-shift in the absorption edge. The induced flexoelectric polarization efficiently boosts the self-powered photodetection performance. In addition, the improved photoresponse has a good correlation with the induced strain gradient, showing a consistent size-dependent flexoelectric effect. The mechanism of flexoelectric and optoelectronic coupling is proposed based on the Landau-Ginzburg-Devonshire double-well model, supported by density functional theory (DFT) calculations. This work provides a brand-new method to induce a strong flexoelectric effect in 2D materials, which is not restricted to crystal symmetry and thus offers unprecedented opportunities for state-of-the-art 2D devices.

摘要

挠曲电特性与光电特性之间的相互作用为研究各种二维材料中的新兴现象提供了一个范例。然而,在二维器件中诱导出大的且可调节的应变梯度的有效方法仍有待探索。在此,我们提出一种通过构建一维 - 二维混合维度异质结构在二维铁电体CuInPS中诱导出大的挠曲电效应的策略。由底层的ZnO纳米线产生的高达4.2×10米的巨大应变梯度诱导出了强挠曲电效应,这通过不对称矫顽场和吸收边的红移得到了进一步证实。诱导出的挠曲电极化有效地提升了自供电光电探测性能。此外,改善后的光响应与诱导出的应变梯度具有良好的相关性,呈现出一致的尺寸依赖性挠曲电效应。基于朗道 - 金兹堡 - 德文希尔双阱模型并结合密度泛函理论(DFT)计算,提出了挠曲电与光电耦合的机制。这项工作提供了一种在二维材料中诱导出强挠曲电效应的全新方法,该方法不受晶体对称性的限制,从而为先进的二维器件提供了前所未有的机遇。

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