Zhou Ting, Li Liang, Wang Yangkai, Zhao Shanguang, Liu Meiling, Zhu Jinglin, Li Weiwei, Lin Zhihan, Li Jianjun, Sun Bowen, Huang Qiuping, Zhang Guobin, Zou Chongwen
National Synchrotron Radiation Laboratory, School of Nuclear Science and Technology, University of Science and Technology of China, Hefei, Anhui 230029, P. R. China.
Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China.
ACS Appl Mater Interfaces. 2024 Mar 20;16(11):13997-14005. doi: 10.1021/acsami.3c19488. Epub 2024 Mar 6.
The efficient generation and active modulation of terahertz (THz) waves are strongly required for the development of various THz applications such as THz imaging/spectroscopy and THz communication. In addition, due to the increasing degree of integration for the THz optoelectronic devices, miniaturizing the complex THz system into a compact unit is also important and necessary. Today, integrating the THz source with the modulator to develop a powerful, easy-to-adjust, and scalable or on-chip THz emitter is still a challenge. As a new type of THz emitter, a spintronic THz emitter has attracted a great deal of attention due to its advantages of high efficiency, ultrawide band, low cost, and easy integration. In this study, we have proposed a multifield-modulated spintronic THz emitter based on the VO/Ni/Pt multilayer film structure with a wide band region of 0-3 THz. Because of the pronounced phase transition of the integrated VO layer, the fabricated THz emitter can be efficiently modulated via thermal or electric stimuli with a modulation depth of about one order of magnitude; the modulation depths under thermal stimulation and electrical stimulation were 91.8% and 97.3%, respectively. It is believed that this multifield modulated spintronic THz emitter will provide various possibilities for the integration of next-generation on-chip THz sources and THz modulators.
太赫兹（THz）波的高效产生和主动调制对于太赫兹成像/光谱学和太赫兹通信等各种太赫兹应用的发展至关重要。此外，由于太赫兹光电器件集成度的不断提高，将复杂的太赫兹系统小型化为紧凑单元也很重要且必要。如今，将太赫兹源与调制器集成以开发强大、易于调节且可扩展或片上太赫兹发射器仍然是一个挑战。作为一种新型太赫兹发射器，自旋电子太赫兹发射器因其高效、超宽带、低成本和易于集成等优点而备受关注。在本研究中，我们基于VO/Ni/Pt多层膜结构提出了一种多场调制自旋电子太赫兹发射器，其宽带区域为0 - 3太赫兹。由于集成的VO层具有明显的相变，所制备的太赫兹发射器可以通过热或电刺激进行有效调制，调制深度约为一个数量级；热刺激和电刺激下的调制深度分别为91.8%和97.3%。相信这种多场调制自旋电子太赫兹发射器将为下一代片上太赫兹源和太赫兹调制器的集成提供各种可能性。
