Zhang Baowei, Ru Yi, Zhou Jiaqian, Jia Jingtao, Song Haoqiang, Liu Zhongyi, Zhang Linlin, Liu Xuying, Zhong Gui-Ming, Yong Xue, Panneerselvam Iyyappa Rajan, Manna Liberato, Lu Siyu
Pingyuan Laboratory, College of Chemistry, Zhengzhou University, Zhengzhou 450000, China.
School of Materials Science and Engineering, Zhengzhou University, Zhengzhou 450001, P. R. China.
J Am Chem Soc. 2024 Mar 20;146(11):7658-7667. doi: 10.1021/jacs.3c14137. Epub 2024 Mar 7.
High-power phosphor-converted white light-emitting diodes (hp-WLEDs) have been widely involved in modern society as outdoor lighting sources. In these devices, due to the Joule effect, the high applied currents cause high operation temperatures (>500 K). Under these conditions, most phosphors lose their emission, an effect known as thermal quenching (TQ). Here, we introduce a zero-dimensional (0D) metal halide, RbInCl:Sb, as a suitable anti-TQ phosphor offering robust anti-TQ behavior up to 500 K. We ascribe this behavior of the metal halide to two factors: (1) a compensation process via thermally activated energy transfer from structural defects to emissive centers and (2) an intrinsic structural rigidity of the isolated octahedra in the 0D structure. The anti-TQ phosphor-based WLEDs can stably work at a current of 2000 mA. The low synthesis cost and nontoxic composition reported here can herald a new generation of anti-TQ phosphors for hp-WLED.
高功率磷光转换白光发光二极管（hp-WLED）作为户外照明光源已广泛应用于现代社会。在这些器件中，由于焦耳效应，高施加电流会导致高工作温度（>500 K）。在这种条件下，大多数磷光体失去其发光，这种效应称为热猝灭（TQ）。在此，我们引入一种零维（0D）金属卤化物RbInCl:Sb，作为一种合适的抗热猝灭磷光体，在高达500 K的温度下具有强大的抗热猝灭性能。我们将这种金属卤化物的这种行为归因于两个因素：（1）通过从结构缺陷到发射中心的热激活能量转移的补偿过程，以及（2）0D结构中孤立八面体的固有结构刚性。基于抗热猝灭磷光体的WLED在2000 mA的电流下可以稳定工作。这里报道的低合成成本和无毒成分可以预示新一代用于hp-WLED的抗热猝灭磷光体的出现。
