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用于非线性光子学的上转换和雪崩纳米粒子的配体辅助直接光刻技术

Ligand-Assisted Direct Lithography of Upconverting and Avalanching Nanoparticles for Nonlinear Photonics.

作者信息

Pan Jia-Ahn, Skripka Artiom, Lee Changhwan, Qi Xiao, Pham Anne L, Woods Joshua J, Abergel Rebecca J, Schuck P James, Cohen Bruce E, Chan Emory M

机构信息

Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States.

出版信息

J Am Chem Soc. 2024 Mar 20;146(11):7487-7497. doi: 10.1021/jacs.3c12850. Epub 2024 Mar 11.

DOI:10.1021/jacs.3c12850
PMID:38466925
Abstract

Upconverting nanoparticles (UCNPs) exhibit unique nonlinear optical properties that can be harnessed in microscopy, sensing, and photonics. However, forming high-resolution nano- and micropatterns of UCNPs with large packing fractions is still challenging. Additionally, there is limited understanding of how nanoparticle patterning chemistries are affected by the particle size. Here, we explore direct patterning chemistries for 6-18 nm Tm-, Yb/Tm-, and Yb/Er-based UCNPs using ligands that form either new ionic linkages or covalent bonds between UCNPs under ultraviolet (UV), electron-beam (e-beam), and near-infrared (NIR) exposure. We study the effect of UCNP size on these patterning approaches and find that 6 nm UCNPs can be patterned with compact ionic-based ligands. In contrast, patterning larger UCNPs requires long-chain, cross-linkable ligands that provide sufficient interparticle spacing to prevent irreversible aggregation upon film casting. Compared to approaches that use a cross-linkable liquid monomer, our patterning method limits the cross-linking reaction to the ligands bound on UCNPs deposited as a thin film. This highly localized photo-/electron-initiated chemistry enables the fabrication of densely packed UCNP patterns with high resolutions (∼1 μm with UV and NIR exposure; <100 nm with e-beam). Our upconversion NIR lithography approach demonstrates the potential to use inexpensive continuous-wave lasers for high-resolution 2D and 3D lithography of colloidal materials. The deposited UCNP patterns retain their upconverting, avalanching, and photoswitching behaviors, which can be exploited in patterned optical devices for next-generation UCNP applications.

摘要

上转换纳米粒子(UCNPs)具有独特的非线性光学特性,可用于显微镜、传感和光子学领域。然而,形成具有大填充率的高分辨率UCNP纳米和微图案仍然具有挑战性。此外,对于纳米粒子图案化化学如何受粒径影响的理解还很有限。在这里,我们探索了基于6 - 18 nm的Tm、Yb/Tm和Yb/Er的UCNPs的直接图案化化学方法,使用在紫外(UV)、电子束(e-beam)和近红外(NIR)照射下在UCNPs之间形成新的离子键或共价键的配体。我们研究了UCNP尺寸对这些图案化方法的影响,发现6 nm的UCNPs可以用紧密的离子基配体进行图案化。相比之下,对较大的UCNPs进行图案化需要长链、可交联的配体,以提供足够的粒子间间距,防止在浇铸薄膜时发生不可逆聚集。与使用可交联液体单体的方法相比,我们的图案化方法将交联反应限制在作为薄膜沉积的UCNPs上结合的配体上。这种高度局部化的光/电子引发化学能够制造具有高分辨率(UV和NIR照射下约1μm;e-beam照射下<100 nm)的密集堆积的UCNP图案。我们的上转换近红外光刻方法展示了使用廉价连续波激光进行胶体材料高分辨率二维和三维光刻的潜力。沉积的UCNP图案保留了它们的上转换、雪崩和光开关行为,可用于下一代UCNP应用的图案化光学器件中。

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