Yu Zhisong, Tao Rong, Guo Jin, Feng Shiyi, Wang Yue
School of Physical Science and Technology, Inner Mongolia University, Hohhot 010021, China.
Nanomaterials (Basel). 2024 Feb 22;14(5):401. doi: 10.3390/nano14050401.
WTe has attracted much attention because of its layered structure and special electronic energy band structure. However, due to the difficulty of evaporating the W element itself and the inactivity of the Te element, the obtained large-area WTe thin films are usually accompanied by many defects. In this paper, WTe nanocrystalline films were successfully prepared on quartz substrates using magnetron sputtering and chemical vapor deposition techniques. Various analytical techniques such as X-ray Diffraction, Raman spectra, X-ray Photoelectron Spectroscopy, Scanning Electron Microscope, and photoluminescence spectra are employed to analyze the crystal structure, composition, and morphology. The effects of different tellurization temperatures and tellurization times on the properties of WTe thin films were investigated. WTe nanocrystalline films with good crystallinity were obtained at 600 °C for 30 min. The thermal conductivity of the WTe films prepared under this condition was 1.173 WmK at 300 K, which is significantly higher than that of samples prepared using other methods.
碲化钨（WTe）因其层状结构和特殊的电子能带结构而备受关注。然而，由于钨（W）元素本身蒸发困难以及碲（Te）元素的惰性，所制备的大面积WTe薄膜通常伴随着许多缺陷。本文采用磁控溅射和化学气相沉积技术在石英衬底上成功制备了WTe纳米晶薄膜。利用各种分析技术，如X射线衍射、拉曼光谱、X射线光电子能谱、扫描电子显微镜和光致发光光谱，来分析晶体结构、成分和形貌。研究了不同碲化温度和碲化时间对WTe薄膜性能的影响。在600℃下碲化30分钟获得了结晶性良好的WTe纳米晶薄膜。在此条件下制备的WTe薄膜在300K时的热导率为1.173W/(m·K)，明显高于使用其他方法制备的样品。
