Thayer School of Engineering, Dartmouth College, Hanover, New Hampshire, USA.
Department of Radiation Oncology Physics and Technology, Shandong Cancer Hospital and Institute, Shandong First Medical University and Shandong Academy of Medical Sciences, Jinan, Shandong, China.
Med Phys. 2024 Jul;51(7):5109-5118. doi: 10.1002/mp.17031. Epub 2024 Mar 17.
FLASH radiotherapy based on ultra-high dose rate (UHDR) is actively being studied by the radiotherapy community. Dedicated UHDR electron devices are currently a mainstay for FLASH studies.
To present the first Monte Carlo (MC) electron beam model for the UHDR capable Mobetron (FLASH-IQ) as a dose calculation and treatment planning platform for preclinical research and FLASH-radiotherapy (RT) clinical trials.
The initial beamline geometry of the Mobetron was provided by the manufacturer, with the first-principal implementation realized in the Geant4-based GAMOS MC toolkit. The geometry and electron source characteristics, such as energy spectrum and beamline parameters, were tuned to match the central-axis percentage depth dose (PDD) and lateral profiles for the pristine beam measured during machine commissioning. The thickness of the small foil in secondary scatter affected the beam model dominantly and was fine tuned to achieve the best agreement with commissioning data. Validation of the MC beam modeling was performed by comparing the calculated PDDs and profiles with EBT-XD radiochromic film measurements for various combinations of applicators and inserts.
The nominal 9 MeV electron FLASH beams were best represented by a Gaussian energy spectrum with mean energy of 9.9 MeV and variance (σ) of 0.2 MeV. Good agreement between the MC beam model and commissioning data were demonstrated with maximal discrepancy < 3% for PDDs and profiles. Hundred percent gamma pass rate was achieved for all PDDs and profiles with the criteria of 2 mm/3%. With the criteria of 2 mm/2%, maximum, minimum and mean gamma pass rates were (100.0%, 93.8%, 98.7%) for PDDs and (100.0%, 96.7%, 99.4%) for profiles, respectively.
A validated MC beam model for the UHDR capable Mobetron is presented for the first time. The MC model can be utilized for direct dose calculation or to generate beam modeling input required for treatment planning systems for FLASH-RT planning. The beam model presented in this work should facilitate translational and clinical FLASH-RT for trials conducted on the Mobetron FLASH-IQ platform.
基于超高剂量率(UHDR)的 FLASH 放疗受到放疗界的积极研究。专用 UHDR 电子设备目前是 FLASH 研究的主要支柱。
介绍第一个用于 UHDR 的蒙特卡罗(MC)电子束模型,即 Mobetron(FLASH-IQ),作为临床前研究和 FLASH 放疗(RT)临床试验的剂量计算和治疗计划平台。
制造商提供了 Mobetron 的初始束线几何形状,在基于 Geant4 的 GAMOS MC 工具包中实现了第一性原理实现。调整了几何形状和电子源特性,例如能谱和束线参数,以匹配在机器调试过程中测量的原始束的中心轴百分深度剂量(PDD)和横向分布。次级散射小箔的厚度主要影响束模型,需要进行微调以获得与调试数据的最佳一致性。通过将计算的 PDD 和分布与各种施源器和插件的 EBT-XD 光致变色胶片测量结果进行比较,对 MC 束建模进行了验证。
标称 9 MeV 电子 FLASH 束最好由均值为 9.9 MeV、方差(σ)为 0.2 MeV 的高斯能谱表示。MC 束模型与调试数据的吻合度很好,PDD 和分布的最大差异<3%。所有 PDD 和分布的伽马通过率均达到 100%,标准为 2mm/3%。标准为 2mm/2%时,PDD 的最大、最小和平均伽马通过率分别为(100.0%、93.8%、98.7%),分布的最大、最小和平均伽马通过率分别为(100.0%、96.7%、99.4%)。
首次介绍了用于 UHDR 的 Mobetron 的验证 MC 束模型。MC 模型可用于直接剂量计算或生成治疗计划系统所需的束建模输入,用于 FLASH-RT 计划。本工作中提出的束模型应有助于在 Mobetron FLASH-IQ 平台上进行的试验的转化和临床 FLASH-RT。