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通过磁显微镜观察磁隧道结中磁斯格明子的电学检测与成核

Electrical Detection and Nucleation of a Magnetic Skyrmion in a Magnetic Tunnel Junction Observed via Magnetic Microscopy.

作者信息

Urrestarazu Larrañaga Joseba, Sisodia Naveen, Guedas Rodrigo, Pham Van Tuong, Di Manici Ilaria, Masseboeuf Aurélien, Garello Kevin, Disdier Florian, Fernandez Bruno, Wintz Sebastian, Weigand Markus, Belmeguenai Mohamed, Pizzini Stefania, Sousa Ricardo C, Buda-Prejbeanu Liliana D, Gaudin Gilles, Boulle Olivier

机构信息

Univ. Grenoble Alpes, CNRS, CEA, Grenoble INP, SPINTEC, 38000 Grenoble, France.

Univ. Grenoble Alpes, CNRS, Institut Néel, 38042 Grenoble, France.

出版信息

Nano Lett. 2024 Mar 27;24(12):3557-3565. doi: 10.1021/acs.nanolett.4c00316. Epub 2024 Mar 18.

Abstract

Magnetic skyrmions are topological spin textures which are envisioned as nanometer scale information carriers in magnetic memory and logic devices. The recent demonstrations of room temperature skyrmions and their current induced manipulation in ultrathin films were first steps toward the realization of such devices. However, important challenges remain regarding the electrical detection and the low-power nucleation of skyrmions, which are required for the read and write operations. Here, we demonstrate, using magnetic microscopy experiments, the electrical detection of a single magnetic skyrmion in a magnetic tunnel junction (MTJ) and its nucleation and annihilation by gate voltage via voltage control of magnetic anisotropy. The nucleated skyrmion can be manipulated by both gate voltages and external magnetic fields, leading to tunable intermediate resistance states. Our results unambiguously demonstrate the readout and voltage controlled write operations in a single MTJ device, which is a major milestone for low power skyrmion based technologies.

摘要

磁斯格明子是一种拓扑自旋纹理,被视作磁存储器和逻辑器件中纳米级的信息载体。近期在室温下对斯格明子及其在超薄膜中电流诱导操控的演示是迈向此类器件实现的第一步。然而,在斯格明子的电检测和低功耗成核方面仍存在重大挑战,而这是读写操作所必需的。在此,我们通过磁显微镜实验证明了在磁性隧道结(MTJ)中对单个磁斯格明子的电检测,以及通过磁各向异性的电压控制实现其通过栅极电压的成核和湮灭。成核的斯格明子可通过栅极电压和外部磁场进行操控,从而导致可调的中间电阻状态。我们的结果明确展示了单个MTJ器件中的读出和电压控制写入操作,这是基于低功耗斯格明子技术的一个重要里程碑。

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