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化学喷涂的原始和掺入镉的CoSnO薄膜,用于在室温下对低ppm水平的二甲胺检测增强化学电阻行为。

Chemically sprayed pristine and Cd incorporated CoSnO thin films for low ppm level enhanced chemi - resistive behaviour towards dimethylamine detection at room temperature.

作者信息

Nallakumar Santhosh, Muthurakku Usha Rani

机构信息

Department of Physics, School of Advanced Sciences, VIT, Vellore 632014, India.

Department of Physics, School of Advanced Sciences, VIT, Vellore 632014, India.

出版信息

J Hazard Mater. 2024 May 5;469:134041. doi: 10.1016/j.jhazmat.2024.134041. Epub 2024 Mar 15.

DOI:10.1016/j.jhazmat.2024.134041
PMID:38522203
Abstract

The surge in hazardous volatile organic liquid emissions driven by the rapid growth of the manufacturing industry has compelled a rising demand for gas sensors, which exhibit remarkable sensitivity, selectivity, and room temperature operation. Ternary metal oxide spinel has indeed garnered significant attention in chemi-resistive gas sensors due to their large reactive surface area, physicochemical, and other unique properties. In this work, we have studied chemically sprayed pristine and Cd incorporated CoSnO thin film as a sensing layer under room temperature (300 K) conditions. The 5 wt% Cd incorporated CoSnO films unveiled a high sensor response to dimethylamine (DMA) gas (S = I/I = 6153 at 1 ppm), which was boosted by 8.89-fold times compared to pristine CoSnO film, due to the large reactive surface area and enhanced defective oxygen vacancies. It has superior selectivity towards DMA gas, good response time (154 s) / recovery time (90 s), superior pro-longevity (S = 6138) after 60 days, stable repeatability (7 cycles), excellent cross-selectivity, and relative humid resistance at 300 K. This research work provides insights on Cd incorporated CoSnO thin films and their feasibility in real-time gas sensing devices.

摘要

制造业的快速发展推动了有害挥发性有机液体排放量的激增,这使得对气体传感器的需求不断上升,这类传感器具有卓越的灵敏度、选择性且能在室温下工作。三元金属氧化物尖晶石因其大的反应表面积、物理化学性质及其他独特性能,在化学电阻式气体传感器领域确实受到了广泛关注。在这项工作中,我们研究了在室温(300 K)条件下,化学喷涂的原始CoSnO薄膜和掺镉CoSnO薄膜作为传感层的情况。掺有5 wt%镉的CoSnO薄膜对二甲胺(DMA)气体表现出高灵敏度(在1 ppm时S = I/I = 6153),由于反应表面积大且缺陷氧空位增加,与原始CoSnO薄膜相比,灵敏度提高了8.89倍。它对DMA气体具有卓越的选择性、良好的响应时间(154 s)/恢复时间(90 s)、60天后卓越的长期稳定性(S = 6138)、稳定的重复性(7个循环)、出色的交叉选择性以及在300 K时的相对耐湿性。这项研究工作为掺镉CoSnO薄膜及其在实时气体传感装置中的可行性提供了见解。

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