Yang Hao, Zhang Qiong, Chang Ruiguang, Wu Zhenghui, Shen Huaibin
Key Laboratory for Special Functional Materials of Ministry of Education, National & Local Joint Engineering Research Centre for High-efficiency Display and Lighting Technology, School of Materials, Henan University, Kaifeng 475004, China.
Inorg Chem. 2024 Apr 8;63(14):6231-6238. doi: 10.1021/acs.inorgchem.3c04511. Epub 2024 Mar 26.
As potential low-cost alternatives of traditional bulk HgCdTe crystals, HgTe colloidal quantum dots (CQDs) synthesized through reactions between HgCl and trioctylphosphine-telluride in hot oleylamine have shown promising performances in mid-wave infrared photodetectors. Tetrapodic or tetrahedral HgTe CQDs have been obtained by tuning the reaction conditions such as temperature, reaction time, concentrations, and ratios of the two precursors. However, the principles governing the growth dynamics and the mechanism behind the transitions between tetrapodic and tetrahedral HgTe CQDs have not been sufficiently understood. In this work, synthesis of HgTe CQDs through bilateral injection is introduced to study the growth mechanism. It suggests that tetrahedral HgTe CQDs usually result from the breaks of tetrapodic HgTe CQDs after their legs grow thick enough. The fundamental factor determining whether the growth makes their legs longer or thicker is the effective concentration of the Te precursor during the growth, rather than temperature, Hg-rich environment, or reactivity of precursors. A chemical model is proposed to illustrate the principles governing the growth dynamics, which provides valuable guidelines for tuning the material properties of HgTe CQDs according to the needs of applications.
作为传统块状碲镉汞晶体的潜在低成本替代品,通过氯化汞与碲化三辛基膦在热的油胺中反应合成的碲化汞胶体量子点(CQD)在中波红外光电探测器中表现出了良好的性能。通过调节反应条件,如温度、反应时间、两种前驱体的浓度和比例,已经获得了四足状或四面体状的碲化汞CQD。然而,控制生长动力学的原理以及四足状和四面体状碲化汞CQD之间转变背后的机制尚未得到充分理解。在这项工作中,引入了通过双边注入合成碲化汞CQD来研究其生长机制。结果表明,四面体状碲化汞CQD通常是由于四足状碲化汞CQD的腿长得足够粗后发生断裂而形成的。决定生长使其腿变长还是变粗的根本因素是生长过程中碲前驱体的有效浓度,而不是温度、富汞环境或前驱体的反应性。提出了一个化学模型来说明控制生长动力学的原理,这为根据应用需求调节碲化汞CQD的材料性能提供了有价值的指导。