Wang Binbin, Yuan Mohan, Liu Jing, Zhang Xingchen, Liu Jing, Yang Ji, Gao Liang, Zhang Jianbing, Tang Jiang, Lan Xinzheng
School of Optical and Electronic Information (OEI), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China.
Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST), Wuhan, Hubei 430074, People's Republic of China.
Nano Lett. 2024 Aug 7;24(31):9583-9590. doi: 10.1021/acs.nanolett.4c02235. Epub 2024 Jul 23.
Thanks to their tunable infrared absorption, solution processability, and low fabrication costs, HgTe colloidal quantum dots (CQDs) are promising for optoelectronic devices. Despite advancements in device design, their potential for imaging applications remains underexplored. For integration with Si-based readout integrated circuits (ROICs), top illumination is necessary for simultaneous light absorption and signal acquisition. However, most high-performing traditional HgTe CQD photodiodes are -on- stack and bottom-illuminated. Herein, we report top-illuminated inverted -on- HgTe CQD photodiodes using a robust -type CQD layer and a thermally evaporated BiS electron transport layer. The -type CQD solid is achieved by exploring the synergism in binary HgTe and AgTe CQDs. These photodetectors show a room-temperature detectivity of 3.4 × 10 jones and an EQE of ∼44% at ∼1.7 μm wavelength, comparable to the -on- HgTe CQD photodiodes. A top-illuminated HgTe CQD short-wave infrared imager (640 × 512 pixels) was fabricated, demonstrating successful infrared imaging.
由于其可调谐的红外吸收、溶液可加工性和较低的制造成本，碲化汞胶体量子点（CQD）在光电器件方面具有广阔前景。尽管在器件设计方面取得了进展，但其在成像应用中的潜力仍未得到充分探索。为了与基于硅的读出集成电路（ROIC）集成，顶部照明对于同时进行光吸收和信号采集是必要的。然而，大多数高性能的传统碲化汞CQD光电二极管是叠层式且底部照明的。在此，我们报道了使用坚固的I型CQD层和热蒸发的BiS电子传输层的顶部照明倒置碲化汞CQD光电二极管。通过探索二元碲化汞和碲化银CQD中的协同作用实现了I型CQD固体。这些光电探测器在室温下的探测率为3.4×10琼斯，在波长约为1.7μm时的外量子效率约为44%，与叠层式碲化汞CQD光电二极管相当。制造了一个顶部照明的碲化汞CQD短波红外成像仪（640×512像素），展示了成功的红外成像。
