Prakash Adithya, Mishra Vikash, Mahesha M G
Department of Physics, Manipal Institute of Technology, Manipal Academy of Higher Education 576104 India
RSC Adv. 2024 Mar 26;14(14):10004-10016. doi: 10.1039/d4ra01414f. eCollection 2024 Mar 20.
Doping is one of the easiest methods to enhance the properties of semiconducting thin films. This work presents a systematic study of the influence of Mg doping on the optoelectronic properties of copper oxide (CuO) thin films prepared by spray pyrolysis. The pristine and doped films were prepared on glass substrates at an optimized temperature of 350 °C and a precursor solution concentration of 0.15 M while the Mg doping concentration was varied between 2 and 10 at%. The properties of the prepared films were studied in detail by using various characterization techniques such as X-ray diffraction, field emission scanning electron microscopy, Raman and photoluminescence, X-ray photoelectron spectroscopy and Hall measurement. The results suggest that oxygen interstitial (O) defects were enhanced upon doping which has influenced the properties of the film. The size of the crystallites reduced, and the band gap widened after doping. In addition, comprehensive density functional theory analyses have been conducted to gain a thorough understanding of the impact of impurity (, doping/interstitial) atoms on the optical and electrical characteristics of CuO. This study shows that O defects improved the conductivity and enhanced the carrier concentration leading to an improvement in the electrical properties of the films.
掺杂是提高半导体薄膜性能最简便的方法之一。本文系统研究了镁掺杂对喷雾热解法制备的氧化铜（CuO）薄膜光电性能的影响。在玻璃衬底上于350℃的优化温度和0.15M的前驱体溶液浓度下制备了原始薄膜和掺杂薄膜，同时镁掺杂浓度在2at%至10at%之间变化。通过使用各种表征技术，如X射线衍射、场发射扫描电子显微镜、拉曼光谱和光致发光、X射线光电子能谱和霍尔测量，详细研究了所制备薄膜的性能。结果表明，掺杂后氧间隙（O）缺陷增加，这影响了薄膜的性能。掺杂后微晶尺寸减小，带隙变宽。此外，还进行了综合密度泛函理论分析，以深入了解杂质（，掺杂/间隙）原子对CuO光学和电学特性的影响。本研究表明，O缺陷提高了电导率并增加了载流子浓度，从而改善了薄膜的电学性能。
