Liu Min, Zhang Yansen, Hu Song, Zhou Guohong, Qin Xianpeng, Wang Shiwei
School of Materials Science & Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China.
Materials (Basel). 2024 Mar 8;17(6):1258. doi: 10.3390/ma17061258.
Ce-doped gadolinium gallium aluminum oxide (Ce: GGAG) precursors were first prepared by the microwave-assisted homogeneous precipitation method (MAHP). Thermal gravity-differential thermal analysis (TG-DTA), X-ray diffraction (XRD), specific surface area analysis (BET) and field emission scanning electron microscopy (FE-SEM) were employed to investigate the crystal structure, phase evolution and morphologies of the Ce: GGAG precursors and powders. The influence of Ga ion concentration in the salt solution on the properties of Ce: GGAG powders was investigated. All the precursors were transformed into single-phase GGAG after being calcined at 950 °C in a furnace for 3 h. Monodispersed Ce: GGAG powders were obtained as the Ga ion concentration was lower than 0.06 mol/L. Single-phase and dense Ce: GGAG ceramics were obtained after sintering at 1600 °C in a flowing oxygen atmosphere for 10 h. Specifically, the Ce: GGAG ceramic reached its maximum density of ~6.68 g/cm, which was close to its theoretical density of 6.70 g/cm, and exhibited the highest optical transmittance of 65.2% at 800 nm after hot isostatic pressing sintering (HIP) as the Ga ion concentration was 0.02 mol/L. The decay time and light yield of the GGAG ceramic were 35 ns and 35,000 ± 1250 ph/MeV, respectively, suggesting that Ce: GGAG ceramics prepared using MAHP-synthesized nanopowders are promising for scintillation applications.
铈掺杂钆镓铝氧化物(Ce: GGAG)前驱体首先通过微波辅助均匀沉淀法(MAHP)制备。采用热重-差示热分析(TG-DTA)、X射线衍射(XRD)、比表面积分析(BET)和场发射扫描电子显微镜(FE-SEM)来研究Ce: GGAG前驱体和粉末的晶体结构、相演变及形貌。研究了盐溶液中镓离子浓度对Ce: GGAG粉末性能的影响。所有前驱体在950℃的炉中煅烧3小时后均转变为单相GGAG。当镓离子浓度低于0.06 mol/L时,获得了单分散的Ce: GGAG粉末。在流动氧气气氛中于1600℃烧结10小时后,获得了单相且致密的Ce: GGAG陶瓷。具体而言,当镓离子浓度为0.02 mol/L时,Ce: GGAG陶瓷达到其最大密度~6.68 g/cm³,接近其理论密度6.70 g/cm³,并且在热等静压烧结(HIP)后于800 nm处表现出最高65.2%的光学透过率。GGAG陶瓷的衰减时间和光产额分别为35 ns和35,000 ± 1250 ph/MeV,这表明使用MAHP合成的纳米粉末制备的Ce: GGAG陶瓷在闪烁应用方面具有前景。