Tb掺杂对光学浮区法生长的(Ce, Tb, Gd)GaAlO晶体闪烁性能的宽浓度范围影响

Wide Concentration Range of Tb Doping Influence on Scintillation Properties of (Ce, Tb, Gd)GaAlO Crystals Grown by the Optical Floating Zone Method.

作者信息

Wu Tong, Wang Ling, Shi Yun, Huang Xintang, Zhang Qian, Xiong Yifei, Wang Hui, Fang Jinghong, Ni Jinqi, He Huan, Wang Chaoyue, Zhou Zhenzhen, Liu Qian, Li Qin, Yu Jianding, Shichalin Oleg, Papynov Evgeniy

机构信息

State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China.

College of Physical Science and Technology, Central China Normal University, Wuhan 430079, China.

出版信息

Materials (Basel). 2022 Mar 10;15(6):2044. doi: 10.3390/ma15062044.

DOI:10.3390/ma15062044

PMID:35329505

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC8951279/

Abstract

To obtain a deeper understand of the energy transfer mechanism between Ce and Tb ions in the aluminum garnet hosts, (Ce, Tb, Gd)GaAlO (GGAG:Ce, Tb) single crystals grown by the optical floating zone (OFZ) method were investigated systematically in a wide range of Tb doping concentration (1-66 at.%). Among those, crystal with 7 at.% Tb reached a single garnet phase while the crystals with other Tb concentrations are mixed phases of garnet and perovskite. Obvious Ce and Ga loss can be observed by an energy dispersive X-ray spectroscope (EDS) technology. The absorption bands belonging to both Ce and Tb ions can be observed in all crystals. Photoluminescence (PL) spectra show the presence of an efficient energy transfer from the Tb to Ce and the gradually quenching effect with increasing of Tb concentration. GGAG: 1% Ce, 7% Tb crystal was found to possess the highest PL intensity under excitation of 450 nm. The maximum light yield (LY) reaches 18,941 pho/MeV. The improved luminescent and scintillation characteristics indicate that the cation engineering of Tb can optimize the photoconversion performance of GGAG:Ce.

摘要

为了更深入地了解铝石榴石基质中铈（Ce）和铽（Tb）离子之间的能量转移机制，对采用光学浮区法（OFZ）生长的（Ce，Tb，Gd）GaAlO（GGAG:Ce，Tb）单晶在宽范围的Tb掺杂浓度（1 - 66原子%）下进行了系统研究。其中，Tb含量为7原子%的晶体为单一石榴石相，而其他Tb浓度的晶体为石榴石和钙钛矿的混合相。通过能量色散X射线光谱仪（EDS）技术可观察到明显的Ce和Ga损失。在所有晶体中都能观察到属于Ce和Tb离子的吸收带。光致发光（PL）光谱表明存在从Tb到Ce的有效能量转移以及随着Tb浓度增加而逐渐出现的猝灭效应。发现GGAG:1%Ce，7%Tb晶体在450nm激发下具有最高的PL强度。最大光产额（LY）达到18941光电子/兆电子伏。改善后的发光和闪烁特性表明，Tb的阳离子工程可以优化GGAG:Ce的光转换性能。