Ngoc Hoang Van
Center for Forecasting Study, Institute of Southeast Vietnamese Studies, Thu Dau Mot University, Thu Dau Mot, Binh Duong province, Vietnam.
R Soc Open Sci. 2024 Mar 27;11(3):231836. doi: 10.1098/rsos.231836. eCollection 2024 Mar.
Research into nanomaterials yields numerous exceptional applications in contemporary science and technology. The subject of this investigation is a one-dimensional nanostructure, six atoms wide, featuring hydrogen-functionalized edges. The theoretical foundation of this study relies on Density Functional Theory (DFT) and is executed through the utilization of the Vienna Ab initio Simulation Package (VASP). The outcomes demonstrate the stability of adsorption configurations, along with the preservation of a hexagonal honeycomb lattice. The pristine configuration, characterized by a wide bandgap, is well-suited for optoelectronic applications, whereas adsorption configurations find their application in gas sensing. Nitrogen (N) adsorption transforms the semiconducting system into a semimetallic one, with the spin-up state showing semiconductor characteristics and the spin-down state exhibiting metallic attributes. The intricate multi-orbital hybridization is explored through the analysis of partial states. While the pristine system remains non-magnetic, N adsorption introduces a magnetic moment of 0.588 μ. The examination of charge density differences indicates a significant charge transfer from N to the CGe substrate surface. Optical properties are systematically investigated, encompassing the dielectric function, absorption coefficient and electron-hole density. Notably, the real part of the dielectric function exhibits negative values, a result that holds promise for future communication applications.
对纳米材料的研究在当代科学技术中产生了众多卓越的应用。本研究的对象是一种一维纳米结构,宽度为六个原子,具有氢官能化边缘。本研究的理论基础依赖于密度泛函理论(DFT),并通过使用维也纳从头算模拟包(VASP)来执行。结果表明了吸附构型的稳定性以及六角形蜂窝晶格的保留。具有宽带隙的原始构型非常适合光电子应用,而吸附构型则应用于气体传感。氮(N)吸附将半导体系统转变为半金属系统,自旋向上状态显示半导体特性,自旋向下状态表现出金属属性。通过对部分态的分析探索了复杂的多轨道杂化。虽然原始系统保持非磁性,但N吸附引入了0.588 μ的磁矩。对电荷密度差异的研究表明从N到CGe衬底表面有显著的电荷转移。系统地研究了光学性质,包括介电函数、吸收系数和电子 - 空穴密度。值得注意的是,介电函数的实部呈现负值,这一结果对未来通信应用具有前景。