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一种用于调控二硫化钼场效应晶体管界面的分子配位策略

A Molecular Coordination Strategy for Regulating the Interface of MoS Field Effect Transistors.

作者信息

Luo Yu, Lu Huiqiang, Huang Jingwen, He Liu, Chen Hailong, Yuan Conghui, Xu Yiting, Zeng Birong, Dai Lizong

出版信息

J Am Chem Soc. 2024 Apr 10;146(14):9709-9720. doi: 10.1021/jacs.3c13696. Epub 2024 Mar 28.

Abstract

Chemically modifying monolayer two-dimensional transition metal dichalcogenides (TMDs) with organic molecules provides a wide range of possibilities to regulate the electronic and optoelectronic performance of both materials and devices. However, it remains challenging to chemically attach organic molecules to monolayer TMDs without damaging their crystal structures. Herein, we show that the Mo atoms of monolayer MoS (1L-MoS) in defect states can coordinate with both catechol and 1,10-phenanthroline (Phen) groups, affording a facile route to chemically modifying 1L-MoS. Through the design of two isomeric molecules (LA2 and LA5) comprising catechol and Phen groups, we show that attaching organic molecules to Mo atoms via coordinative bonds has no negative effect on the crystal structure of 1L-MoS. Both theoretical calculation and experiment results indicate that the coordinative strategy is beneficial for (i) repairing sulfur vacancies and passivating defects; (ii) achieving a long-term and stable n-doping effect; and (iii) facilitating the electron transfer. Field effect transistors (FETs) based on the coordinatively modified 1L-MoS show high electron mobilities up to 120.3 cm V s with impressive current on/off ratios over 10. Our results indicate that coordinatively attaching catechol- or Phen-bearing molecules may be a general method for the nondestructive modification of TMDs.

摘要

用有机分子对单层二维过渡金属硫族化合物(TMDs)进行化学修饰,为调控材料及器件的电子和光电性能提供了广泛的可能性。然而,在不破坏其晶体结构的情况下将有机分子化学连接到单层TMDs上仍然具有挑战性。在此,我们表明处于缺陷态的单层MoS(1L-MoS)中的Mo原子可以与儿茶酚和1,10-菲咯啉(Phen)基团配位,从而提供了一种化学修饰1L-MoS的简便途径。通过设计包含儿茶酚和Phen基团的两种同分异构体分子(LA2和LA5),我们表明通过配位键将有机分子连接到Mo原子上对1L-MoS的晶体结构没有负面影响。理论计算和实验结果均表明,配位策略有利于(i)修复硫空位并钝化缺陷;(ii)实现长期稳定的n型掺杂效应;(iii)促进电子转移。基于配位修饰的1L-MoS的场效应晶体管(FETs)显示出高达120.3 cm² V⁻¹ s⁻¹的高电子迁移率,其电流开/关比超过10,令人印象深刻。我们的结果表明,配位连接含儿茶酚或Phen的分子可能是一种对TMDs进行无损修饰的通用方法。

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