Increased Mobility and Reduced Hysteresis of MoS Field-Effect Transistors via Direct Surface Precipitation of CsPbBr-Nanoclusters for Charge Transfer Doping.

Transition-metal dichalcogenides (TMDs) and metal halide perovskites (MHPs) have been investigated for various applications, owing to their unique physical properties and excellent optoelectronic functionalities. TMD monolayers synthesized via chemical vapor deposition (CVD), which are advantageous for large-area synthesis, exhibit low mobility and prominent hysteresis in the electrical signals of field-effect transistors (FETs) because of their native defects. In this study, we demonstrate an increase in electrical mobility by ∼170 times and reduced hysteresis in the current-bias curves of MoS FETs hybridized with CsPbBr for charge transfer doping, which is implemented via solution-based CsPbBr-nanocluster precipitation on CVD-grown MoS monolayer FETs. Electrons injected from CsPbBr into MoS induce heavy n-doping and heal point defects in the MoS channel layer, thus significantly increasing mobility and reducing hysteresis in the hybrid FETs. Our results provide a foundation for improving the reliability and performance of TMD-based FETs by hybridizing them with solution-based perovskites.