He Wen, Wu Ya-Jie, Cui Ya-Na, Wang Chunyang, Liu Xuelian, Xiao Bo
Appl Opt. 2024 Apr 1;63(10):2570-2577. doi: 10.1364/AO.510388.
The limited excitation efficiency of quantum dots in the detection of subsurface defects in optical elements by quantum dot fluorescence gives rise to insufficient accuracy. To enhance the excitation efficiency of quantum dots, we studied the modulation of the polarization direction of linearly polarized incident light on quantum dot fluorescence. We first apply density matrix evolution theory to study the quantum dots interacting with linearly polarized incident light and emitting fluorescence. The fluorescence intensity exhibits cosine oscillations versus modulated laser polarization. It reaches a maximum value at the polarization angle zero, and then decreases as the angle becomes larger until /2. The experimental results for the quantum dot in both solutions and subsurface defect of optical elements confirmed these results. For optical elements tagged with CdSe/ZnS quantum dots, the fluorescence intensity increases by 61.7%, and the area for the detected subsurface defects increases by 142.9%. Similarly, for C and InP/ZnS quantum dots, there are also increases in both the fluorescence intensity and the area of subsurface defects. Our study suggests that the subsurface defect detection in optical elements by the linearly polarized incident light could enhance the detection accuracy of subsurface defects in optical elements, and potentially achieve super-resolution imaging of subsurface defects.
量子点荧光用于检测光学元件表面下缺陷时激发效率有限,导致检测精度不足。为提高量子点的激发效率,我们研究了线偏振入射光的偏振方向对量子点荧光的调制。我们首先应用密度矩阵演化理论来研究量子点与线偏振入射光相互作用并发射荧光的情况。荧光强度随调制激光偏振呈现余弦振荡。在偏振角为零时达到最大值,然后随着角度增大而减小,直至达到π/2。量子点在溶液和光学元件表面下缺陷中的实验结果证实了这些结果。对于标记有CdSe/ZnS量子点的光学元件,荧光强度增加了61.7%,检测到的表面下缺陷面积增加了142.9%。同样,对于C和InP/ZnS量子点,荧光强度和表面下缺陷面积也都有所增加。我们的研究表明,利用线偏振入射光检测光学元件表面下缺陷可以提高光学元件表面下缺陷的检测精度,并有可能实现表面下缺陷的超分辨率成像。