Webb Tatiana A, Tamanna Afrin N, Ding Xiaxin, Verma Nishchhal, Xu Jikai, Krusin-Elbaum Lia, Dean Cory R, Basov Dmitri N, Pasupathy Abhay N
Department of Physics, Columbia University, New York, New York 10027, United States.
Department of Physics, The City College of New York, New York, New York 10027, United States.
Nano Lett. 2024 Apr 17;24(15):4393-4399. doi: 10.1021/acs.nanolett.3c05058. Epub 2024 Apr 3.
Highly tunable properties make Mn(Bi,Sb)Te a rich playground for exploring the interplay between band topology and magnetism: On one end, MnBiTe is an antiferromagnetic topological insulator, while the magnetic structure of MnSbTe (MST) can be tuned between antiferromagnetic and ferrimagnetic. Motivated to control electronic properties through real-space magnetic textures, we use magnetic force microscopy (MFM) to image the domains of ferrimagnetic MST. We find that magnetic field tunes between stripe and bubble domain morphologies, raising the possibility of topological spin textures. Moreover, we combine transport with domain manipulation and imaging to both write MST device properties and directly measure the scaling of the Hall response with the domain area. This work demonstrates measurement of the local anomalous Hall response using MFM and opens the door to reconfigurable domain-based devices in the M(B,S)T family.
高度可调节的特性使Mn(Bi,Sb)Te成为探索能带拓扑与磁性之间相互作用的丰富平台:一方面,MnBiTe是一种反铁磁拓扑绝缘体,而MnSbTe(MST)的磁结构可以在反铁磁和亚铁磁之间调节。出于通过实空间磁纹理控制电子特性的动机,我们使用磁力显微镜(MFM)对亚铁磁MST的磁畴进行成像。我们发现磁场可在条纹和泡状畴形态之间调节,这增加了拓扑自旋纹理存在的可能性。此外,我们将输运与畴操纵和成像相结合,以写入MST器件特性并直接测量霍尔响应随畴面积的缩放比例。这项工作展示了使用MFM测量局部反常霍尔响应,并为M(B,S)T家族中基于可重构畴的器件打开了大门。