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反铁磁拓扑绝缘体MnBiTe中畴壁的磁成像

Magnetic Imaging of Domain Walls in the Antiferromagnetic Topological Insulator MnBiTe.

作者信息

Sass Paul M, Ge Wenbo, Yan Jiaqiang, Obeysekera D, Yang J J, Wu Weida

机构信息

Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854, United States.

Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.

出版信息

Nano Lett. 2020 Apr 8;20(4):2609-2614. doi: 10.1021/acs.nanolett.0c00114. Epub 2020 Mar 5.

Abstract

The control of domain walls or spin textures is crucial for spintronic applications of antiferromagnets. Despite many efforts, it has been challenging to directly visualize antiferromagnetic domains or domain walls with nanoscale resolution, especially in magnetic field. Here, we report magnetic imaging of domain walls in several uniaxial antiferromagnets, the topological insulator MnBiTe family, using cryogenic magnetic force microscopy (MFM). Our MFM results reveal higher magnetic susceptibility inside the domain walls than in domains. Domain walls in these antiferromagnets form randomly with strong thermal and magnetic field dependence. The direct visualization of these domain walls and domain structures in the magnetic field will not only facilitate the exploration of intrinsic topological phenomena in antiferromagnetic topological insulators but will also open a new path toward control and manipulation of domain walls or spin textures in functional antiferromagnets.

摘要

对反铁磁体的自旋电子学应用而言,畴壁或自旋纹理的控制至关重要。尽管付出了诸多努力,但以纳米级分辨率直接可视化反铁磁畴或畴壁仍具有挑战性,尤其是在磁场中。在此,我们报告了使用低温磁力显微镜(MFM)对几种单轴反铁磁体——拓扑绝缘体MnBiTe族中的畴壁进行的磁成像。我们的MFM结果显示,畴壁内的磁化率高于畴内。这些反铁磁体中的畴壁随机形成,且对热和磁场有很强的依赖性。在磁场中对这些畴壁和畴结构进行直接可视化,不仅将有助于探索反铁磁拓扑绝缘体中的固有拓扑现象,还将为功能反铁磁体中畴壁或自旋纹理的控制与操纵开辟一条新途径。

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