Zhang Nana, Cui Mengqi, Zhou Junxin, Shao Zhitao, Gao Xinyu, Liu Jiaming, Sun Ruyu, Zhang Yuan, Li Wenhui, Li Xinghan, Yao Jing, Gao Feng, Feng Wei
College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China.
Key Laboratory for Photonic and Electronic Bandgap Materials, Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin 150025, China.
ACS Appl Mater Interfaces. 2024 Apr 17;16(15):19167-19174. doi: 10.1021/acsami.4c00801. Epub 2024 Apr 3.
Ultraviolet photodetectors (UV PDs) have attracted significant attention due to their wide range of applications, such as underwater communication, biological analysis, and early fire warning systems. Indium oxide (InO) is a candidate for developing high-performance photoelectrochemical (PEC)-type UV PDs owing to its high UV absorption and good stability. However, the self-powered photoresponse of the previously reported InO-based PEC UV PDs is unsatisfactory. In this work, high-performance self-powered PEC UV PDs were constructed by using an InO nanocube film (NCF) as a photoanode. InO NCF photoanodes were synthesized on FTO by using hydrothermal methods with a calcining process. The influence of the electrolyte concentration, bias potential, and irradiation light on the photoresponse properties was systematically studied. InO NCF PEC UV PDs exhibit outstanding self-powered photoresponses to 365 nm UV light with a high responsivity of 44.43 mA/W and fast response speed (20/30 ms) under zero bias potential, these results are superior to those of previously reported InO-based PEC UV PDs. The improved self-powered photoresponse is attributed to the higher photogenerated carrier separation efficiency and faster charge transport of the in-situ grown InO NCF. In addition, these PDs exhibit excellent multicycle stability, maintaining the photocurrent at 98.69% of the initial value after 700 optical switching cycles. Therefore, our results prove the great promise of InO in self-powered PEC UV PDs.
紫外光电探测器（UV PDs）因其广泛的应用而备受关注，如水下通信、生物分析和早期火灾预警系统。氧化铟（InO）由于其高紫外吸收和良好的稳定性，是开发高性能光电化学（PEC）型UV PDs的候选材料。然而，先前报道的基于InO的PEC UV PDs的自供电光响应并不理想。在这项工作中，通过使用InO纳米立方薄膜（NCF）作为光阳极构建了高性能自供电PEC UV PDs。采用水热法并经过煅烧工艺在FTO上合成了InO NCF光阳极。系统研究了电解液浓度、偏置电位和照射光对光响应特性的影响。InO NCF PEC UV PDs在零偏置电位下对365 nm紫外光表现出出色的自供电光响应，具有44.43 mA/W的高响应度和快速响应速度（20/30 ms），这些结果优于先前报道的基于InO的PEC UV PDs。自供电光响应的改善归因于原位生长的InO NCF具有更高的光生载流子分离效率和更快的电荷传输。此外，这些探测器表现出优异的多循环稳定性，在700次光开关循环后，光电流保持在初始值的98.69%。因此，我们的结果证明了InO在自供电PEC UV PDs方面具有巨大潜力。
