Shah Nidhi, Huang Tien-Lu, Nambiar Harikrishnan N, Zamborini Francis P
Department of Chemistry, Indiana University Southeast, New Albany, Indiana 47150, United States.
Department of Chemistry, University of Louisville, Louisville, Kentucky 40292, United States.
Langmuir. 2024 Apr 16;40(15):7835-7842. doi: 10.1021/acs.langmuir.3c03222. Epub 2024 Apr 4.
Here, we compare the amount and morphology of silver (Ag) nanostructures electrodeposited at varied potentials and times in the presence of cetyltrimethylammonium bromide (CTAB) onto glass/indium tin oxide (glass/ITO) electrodes functionalized with mercaptopropyltrimethoxysilane (MPTMS) and coated or not coated with 4 nm average diameter Au nanoparticle (Au NP) seeds. There is a significantly larger amount of Ag deposited on the seeded electrode surface compared to that in the nonseeded electrode at potentials of -150 to -300 mV (vs Ag/AgCl) since the Au NP seeds act as catalysts for Ag deposition. At more negative overpotentials of -400 to -500 mV, the amount of Ag deposited on both electrodes is similar because the deposition kinetics are fast enough on glass/ITO that the Au seed catalyst does not make as big of a difference. Ag nanorods (NRs) and nanowires (NWs) form on the seeded surfaces, especially at more positive potentials, where deposition primarily occurs on the Au seed catalysts. Deposition of Ag onto the Au seeds appears as a separate peak in the voltammetry. This procedure mimics the seed-mediated growth of Ag NRs observed in solution in the presence of CTAB using ascorbic acid as a reducing agent. The yield, length, and aspect ratio of the Ag NRs/NWs depend on the deposition time and potential with the average length ranging from 300 nm to 3 μm for times of 30-120 min and potentials of -150 to -200 mV. The electrochemical seed-mediated growth of Ag NRs/NWs across electrode gaps could find use for resistive and surface-enhanced Raman-based sensing and molecular electronic applications.
在此,我们比较了在十六烷基三甲基溴化铵(CTAB)存在下,于不同电位和时间电沉积在巯基丙基三甲氧基硅烷(MPTMS)功能化且涂覆或未涂覆平均直径为4 nm的金纳米颗粒(Au NP)种子的玻璃/氧化铟锡(玻璃/ITO)电极上的银(Ag)纳米结构的数量和形态。在-150至-300 mV(相对于Ag/AgCl)的电位下,与未播种的电极相比,播种电极表面沉积的Ag量显著更多,因为Au NP种子充当Ag沉积的催化剂。在-400至-500 mV的更负过电位下,两个电极上沉积的Ag量相似,因为在玻璃/ITO上的沉积动力学足够快,以至于Au种子催化剂的影响不大。Ag纳米棒(NRs)和纳米线(NWs)在播种表面形成,特别是在更正的电位下,此时沉积主要发生在Au种子催化剂上。Ag在Au种子上的沉积在伏安法中表现为一个单独的峰。该过程模拟了在以抗坏血酸为还原剂且存在CTAB的溶液中观察到的Ag NRs的种子介导生长。Ag NRs/NWs的产率、长度和纵横比取决于沉积时间和电位,在30 - 120分钟的时间和-150至-200 mV的电位下,平均长度范围为300 nm至3μm。跨电极间隙的Ag NRs/NWs的电化学种子介导生长可用于基于电阻和表面增强拉曼的传感以及分子电子应用。