Yang Shu-Meng, Yen Hsi-Kai, Lu Kuo-Chang
Department of Materials Science and Engineering, National Cheng Kung University, Tainan 701, Taiwan.
Core Facility Center, National Cheng Kung University, Tainan 701, Taiwan.
Nanomaterials (Basel). 2022 Mar 8;12(6):897. doi: 10.3390/nano12060897.
In this study, indium tin oxide nanowires (ITO NWs) with high density and crystallinity were synthesized by chemical vapor deposition (CVD) via a vapor-liquid-solid (VLS) route; the NWs were decorated with 1 at% and 3 at% silver nanoparticles on the surface by a unique electrochemical method. The ITO NWs possessed great morphologies with lengths of 5~10 μm and an average diameter of 58.1 nm. Characterization was conducted through transmission electron microscopy (TEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscope (XPS) to identify the structure and composition of the ITO NWs. The room temperature photoluminescence (PL) studies show that the ITO NWs were of visible light-emitting properties, and there were a large number of oxygen vacancies on the surface. The successful modification of Ag was confirmed by TEM, XRD and XPS. PL analysis reveals that there was an extra Ag signal at around 1.895 eV, indicating the potential application of Ag-ITO NWs as nanoscale optical materials. Electrical measurements show that more Ag nanoparticles on the surface of ITO NWs contributed to higher resistivity, demonstrating the change in the electron transmission channel of the Ag-ITO NWs. ITO NWs and Ag-ITO NWs are expected to enhance the performance of electronic and optoelectronic devices.
在本研究中,通过化学气相沉积(CVD)经由气-液-固(VLS)路线合成了具有高密度和结晶度的铟锡氧化物纳米线(ITO NWs);通过一种独特的电化学方法在纳米线表面修饰了1原子百分比和3原子百分比的银纳米颗粒。ITO纳米线具有优异的形貌,长度为5~10μm,平均直径为58.1nm。通过透射电子显微镜(TEM)、能量色散光谱(EDS)、X射线衍射(XRD)和X射线光电子能谱仪(XPS)进行表征,以确定ITO纳米线的结构和组成。室温光致发光(PL)研究表明,ITO纳米线具有可见光发射特性,且表面存在大量氧空位。通过TEM、XRD和XPS证实了Ag的成功修饰。PL分析表明,在约1.895eV处存在额外的Ag信号,表明Ag-ITO纳米线作为纳米级光学材料的潜在应用。电学测量表明,ITO纳米线表面更多的银纳米颗粒导致更高的电阻率,证明了Ag-ITO纳米线电子传输通道的变化。ITO纳米线和Ag-ITO纳米线有望提高电子和光电器件的性能。