Qiao Shuo, Qiu Yuanyuan, Lu Yue, Wang Zihan, Yuan Mingxuan, Ji Qingqing
School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, People's Republic of China.
Nano Lett. 2024 Apr 17;24(15):4498-4504. doi: 10.1021/acs.nanolett.4c00423. Epub 2024 Apr 8.
Dimensionality of materials is closely related to their physical properties. For two-dimensional (2D) semiconductors such as monolayer molybdenum disulfide (MoS), converting them from 2D nanosheets to one-dimensional (1D) nanoscrolls could contribute to remarkable electronic and optoelectronic properties, yet the rolling-up process still lacks sufficient controllability, which limits the development of their device applications. Herein we report a modified solvent evaporation-induced rolling process that halts at intermediate states and achieve MoS nanoscrolls with high yield and decent axial uniformity. The accordingly fabricated nanoscroll memories exhibit an on/off ratio of ∼10 and a retention time exceeding 10 s and can realize multilevel storage with pulsed gate voltages. Such open-end, high-curvature, and hollow 1D nanostructures provide new possibilities to manipulate the hysteresis windows and, consequently, the charge storage characteristics of nanoscale field-effect transistors, thereby holding great promise for the development of miniaturized memories.
材料的维度与其物理性质密切相关。对于二维（2D）半导体，如单层二硫化钼（MoS），将它们从二维纳米片转变为一维（1D）纳米卷轴可带来显著的电子和光电特性，然而卷曲过程仍缺乏足够的可控性，这限制了其器件应用的发展。在此，我们报道了一种改进的溶剂蒸发诱导卷曲过程，该过程在中间状态停止，并以高产率和良好的轴向均匀性制备出二硫化钼纳米卷轴。相应制备的纳米卷轴存储器表现出约10的开/关比和超过10秒的保持时间，并且可以通过脉冲栅极电压实现多级存储。这种开口端、高曲率和中空的一维纳米结构为操纵滞后窗口以及进而操纵纳米级场效应晶体管的电荷存储特性提供了新的可能性，从而为小型化存储器的发展带来巨大希望。
