Zhang Rongjie, Lai Yongjue, Chen Wenjun, Teng Changjiu, Sun Yujie, Yang Liusi, Wang Jingyun, Liu Bilu, Cheng Hui-Ming
Shenzhen Geim Graphene Center, Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research, Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016, People's Republic of China.
ACS Nano. 2022 Apr 26;16(4):6309-6316. doi: 10.1021/acsnano.2c00350. Epub 2022 Mar 24.
Atomically thin two-dimensional (2D) semiconductors are promising for next-generation memory to meet the scaling down of semiconductor industry. However, the controllability of carrier trapping status, which is the key figure of merit for memory devices, still halts the application of 2D semiconductor-based memory. Here, we introduce a scheme for 2D material based memory using wrinkles in monolayer 2D semiconductors as controllable carrier trapping centers. Memory devices based on wrinkled monolayer MoS show multilevel storage capability, an on/off ratio of 10, and a retention time of >10 s, as well as tunable linear and exponential behaviors at the stimulation of different gate voltages. We also reveal an interesting wrinkle-based carrier trapping mechanism by using conductive atomic force microscopy. This work offers a configuration to control carriers in ultrathin memory devices and for in-memory calculations.
