Polumati Gowtham, Kolli Chandra Sekhar Reddy, Flores Mario, Kumar Aayush, Sanghvi Aarnav, Bugallo Andres De Luna, Sahatiya Parikshit
Department of Electrical and Electronics Engineering, BITS Pilani, Hyderabad Campus, Hyderabad 500078, India.
Centro de Física Aplicada y Tecnología Avanzada, Universidad Nacional Autónoma de México, A.P. 1-1010, Querétaro, Qro CP 76000, México.
ACS Appl Mater Interfaces. 2024 Apr 17;16(15):19261-19270. doi: 10.1021/acsami.4c02295. Epub 2024 Apr 8.
The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS and solution-processed MoS quantum dots (QDs). The mixed dimensionality of 2D (ReS) and zero-dimensional (0D) MoS QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS and MoS QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 10, 3.3 × 10, and 2.6 × 10 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.
二维(2D)材料的卓越特性推动了光探测和光电子学研究的重大进展。目前,有许多成功的方法用于提高光电探测器的响应度,但器件有限的光谱范围仍然是一个限制因素。这项工作展示了一种混合维度(2D/0D)混合光电探测器器件的开发,该器件采用化学气相沉积(CVD)生长的单层ReS₂和溶液处理的MoS₂量子点(QDs)制成。二维(ReS₂)和零维(0D)MoS₂量子点的混合维度有助于扩大器件的光谱范围[从紫外线(360纳米)到近红外(780纳米)]。此外,由于ReS₂和MoS₂量子点之间的功函数差异,混合维度界面上的内建电场促进了有效的电荷分离和迁移,从而提高了器件的响应度。所制备的光电探测器在可见光、紫外线和近红外光照射下的计算响应度分别为5.4×10⁴、3.3×10³和2.6×10³A/W,与现有关于宽带光探测的报告相比,这一结果非常显著。混合维度异质结构与接触工程相结合,为高响应宽带光电探测器在安全、医疗保健等潜在应用中铺平了道路。