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基于PtSe/MoS异质结构的高响应度自供电光电探测器。

Highly Responsive and Self-Powered Photodetector Based on PtSe/MoS Heterostructure.

作者信息

Li Haoran, Yang Zhibin

机构信息

Key Laboratory of Optoelectronic Information and Technology, Ministry of Education, and College of Precision Instrument and Optoelectronics Engineering, Tianjin University, Tianjin 300072, China.

出版信息

Molecules. 2024 May 29;29(11):2553. doi: 10.3390/molecules29112553.

Abstract

In recent years, 2D materials and their heterostructures have started to offer an ideal platform for high-performance photodetection devices. In this work, a highly responsive, self-powered photodetector based on PtSe/MoS van der Waals heterostructure is demonstrated. The device achieves a noteworthy wide band spectral response from visible (405 nm) range to the near infrared region (980 nm). The remarkable photoresponsivity and external quantum efficiency up to 4.52 A/W, and 1880% are achieved, respectively, at 405 nm illumination with fast response time of 20 ms. In addition, the photodetector exhibits a decent photoresponsivity of 33.4 mA/W at zero bias, revealing the photodetector works well in the self-driven mode. Our work suggests that a PtSe/MoS heterostructure could be a potential candidate for the high-performance photodetection applications.

摘要

近年来,二维材料及其异质结构已开始为高性能光电探测器件提供一个理想平台。在这项工作中,展示了一种基于PtSe/MoS范德华异质结构的高响应性、自供电光电探测器。该器件在从可见光(405 nm)范围到近红外区域(980 nm)实现了值得注意的宽带光谱响应。在405 nm光照下,响应时间为20 ms,分别实现了高达4.52 A/W的显著光响应度和1880%的外量子效率。此外,该光电探测器在零偏压下表现出33.4 mA/W的良好光响应度,表明该光电探测器在自驱动模式下工作良好。我们的工作表明,PtSe/MoS异质结构可能是高性能光电探测应用的潜在候选材料。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/1230/11173480/e9afacc2183d/molecules-29-02553-g001.jpg

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