Awe Oluwayomi F, Eya Henry I, Amaral Ricardo, Komalla Nikhil, Nbelayim Pascal, Dzade Nelson Y
Department of Energy and Mineral Engineering, Pennsylvania State University, University Park, PA 16802, USA.
Department of Materials Science and Engineering, School of Engineering Sciences, College of Basic and Applied Sciences, University of Ghana, Accra, Ghana.
Phys Chem Chem Phys. 2024 Apr 24;26(16):12869-12879. doi: 10.1039/d3cp04453j.
Herein, first-principles density functional theory calculations have been employed to unravel the interfacial geometries (composition and stability), electronic properties (density of states and differential charge densities), and charge carrier transfers (work function and energy band alignment) of a TiO(001)/FeS(100) heterojunction. Analyses of the structure and electronic properties reveal the formation of strong interfacial Fe-O and Ti-S ionic bonds, which stabilize the interface with an adhesion energy of -0.26 eV Å. The work function of the TiO(001)/FeS(100) heterojunction is predicted to be much smaller than those of the isolated FeS(100) and TiO(001) layers, indicating that less energy will be needed for electrons to transfer from the ground state to the surface to promote photochemical reactions. The difference in the work function between the FeS(100) and TiO(001) heterojunction components caused an electron density rearrangement at the heterojunction interface, which induces an electric field that separates the photo-generated electrons and holes. Consistently, a staggered band alignment is predicted at the interface with the conduction band edge and the valence-band edge of FeS lying 0.37 and 2.62 eV above those of anatase. These results point to efficient charge carrier separation in the TiO(001)/FeS(100) heterojunction, wherein photoinduced electrons would transfer from the FeS to the TiO layer. The atomistic insights into the mechanism of enhanced charge separation and transfer across the interface rationalize the observed high photocatalytic activity of the mixed TiO(001)/FeS(100) heterojunction over the individual components.
在此,我们采用第一性原理密度泛函理论计算来揭示TiO(001)/FeS(100)异质结的界面几何结构(组成和稳定性)、电子性质(态密度和差分电荷密度)以及电荷载流子转移(功函数和能带排列)。对结构和电子性质的分析揭示了强界面Fe - O和Ti - S离子键的形成,这些键以 - 0.26 eV Å的粘附能稳定了界面。预计TiO(001)/FeS(100)异质结的功函数比孤立的FeS(100)和TiO(001)层的功函数小得多,这表明电子从基态转移到表面以促进光化学反应所需的能量更少。FeS(100)和TiO(001)异质结组件之间功函数的差异导致异质结界面处的电子密度重新排列,从而诱导出一个电场,该电场将光生电子和空穴分离。一致地,预计在界面处会出现交错的能带排列,FeS的导带边缘和价带边缘比锐钛矿的导带边缘和价带边缘分别高0.37 eV和2.62 eV。这些结果表明TiO(001)/FeS(100)异质结中电荷载流子的有效分离,其中光致电子将从FeS转移到TiO层。对界面处电荷分离和转移增强机制的原子尺度洞察解释了观察到的混合TiO(001)/FeS(100)异质结相对于单个组件具有高光催化活性的原因。