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用于固体氧化物燃料电池的正交晶系FeNbO₄材料中的阳离子掺杂和氧空位:密度泛函理论研究

Cation doping and oxygen vacancies in the orthorhombic FeNbO4 material for solid oxide fuel cell applications: A density functional theory study.

作者信息

Wang Xingyu, Santos-Carballal David, de Leeuw Nora H

机构信息

School of Chemistry, University of Leeds, Leeds LS2 9JT, United Kingdom.

Department of Earth Sciences, Utrecht University, 3584 CB Utrecht, The Netherlands.

出版信息

J Chem Phys. 2024 Apr 21;160(15). doi: 10.1063/5.0192749.

DOI:10.1063/5.0192749
PMID:38634493
Abstract

The orthorhombic phase of FeNbO4, a promising anode material for solid oxide fuel cells (SOFCs), exhibits good catalytic activity toward hydrogen oxidation. However, the low electronic conductivity of the material specifically in the pure structure without defects or dopants limits its practical applications as an SOFC anode. In this study, we have employed density functional theory (DFT + U) calculations to explore the bulk and electronic properties of two types of doped structures, Fe0.9375A0.0625NbO4 and FeNb0.9375B0.0625O4 (A, B = Ti, V, Cr, Mn, Co, Ni) and the oxygen-deficient structures Fe0.9375A0.0625NbO3.9375 and FeNb0.9375B0.0625O3.9375, where the dopant is positioned in the first nearest neighbor site to the oxygen vacancy. Our DFT simulations have revealed that doping in the Fe sites is energetically favorable compared to doping in the Nb site, resulting in significant volume expansion. The doping process generally requires less energy when the O-vacancy is surrounded by one Fe and two Nb ions. The simulated projected density of states of the oxygen-deficient structures indicates that doping in the Fe site, particularly with Ti and V, considerably narrows the bandgap to ∼0.5 eV, whereas doping with Co at the Nb sites generates acceptor levels close to 0 eV. Both doping schemes, therefore, enhance electron conduction during SOFC operation.

摘要

FeNbO4的正交相是一种很有前景的固体氧化物燃料电池(SOFC)阳极材料,对氢氧化反应表现出良好的催化活性。然而,该材料的电子电导率较低,特别是在无缺陷或无掺杂的纯结构中,这限制了其作为SOFC阳极的实际应用。在本研究中,我们采用密度泛函理论(DFT + U)计算来探究两种掺杂结构Fe0.9375A0.0625NbO4和FeNb0.9375B0.0625O4(A、B = Ti、V、Cr、Mn、Co、Ni)以及缺氧结构Fe0.9375A0.0625NbO3.9375和FeNb0.9375B0.0625O3.9375的体相和电子性质,其中掺杂剂位于与氧空位最近邻的位置。我们的DFT模拟表明,与Nb位掺杂相比,Fe位掺杂在能量上更有利,会导致显著的体积膨胀。当氧空位被一个Fe和两个Nb离子包围时,掺杂过程通常需要较少的能量。缺氧结构的模拟投影态密度表明,Fe位掺杂,特别是用Ti和V掺杂,会使带隙显著缩小至~0.5 eV,而在Nb位用Co掺杂会产生接近0 eV的受主能级。因此,这两种掺杂方案都能增强SOFC运行过程中的电子传导。

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