Fröhlich Markus, Kögel Marco, Hiller Jonas, Kahlmeyer Leo, Meixner Alfred J, Scheele Marcus, Meyer Jannik C, Lauth Jannika
University of Tübingen, Institute of Physical and Theoretical Chemistry, Auf der Morgenstelle 18, D-72076, Tübingen, Germany.
NMI Natural and Medical Sciences Institute at the University of Tübingen, Markwiesenstraße 55, D-72770 Reutlingen, Germany.
Phys Chem Chem Phys. 2024 May 1;26(17):13271-13278. doi: 10.1039/d4cp00530a.
Composition dependent tuning of electronic and optical properties in semiconducting two-dimensional (2D) transition metal dichalcogenide (TMDC) alloys is promising for tailoring the materials for optoelectronics. Here, we report a solution-based synthesis suitable to obtain predominantly monolayered 2D semiconducting MoWS nanosheets (NSs) with controlled composition as substrate-free colloidal inks. Atomic-level structural analysis by high-angle annular dark-field (HAADF) scanning transmission electron microscopy (STEM) coupled with energy dispersive X-ray spectroscopy (EDXS) depicts the distribution of individual atoms within the MoWS NSs and reveals the tendency for domain formation, especially at low molar tungsten fractions. These domains cause a broadening in the associated ensemble-level Raman spectra, confirming the extrapolation of the structural information from the microscopic scale to the properties of the entire sample. A characterization of the MoWS NSs by steady-state optical spectroscopy shows that a band gap tuning in the range of 1.89-2.02 eV (614-655 nm) and a spin-orbit coupling-related exciton splitting of 0.16-0.38 eV can be achieved, which renders colloidal methods viable for upscaling low cost synthetic approaches toward application-taylored colloidal TMDCs.
半导体二维(2D)过渡金属二硫属化物(TMDC)合金中电子和光学性质的成分依赖性调谐对于定制用于光电子学的材料很有前景。在此,我们报告一种基于溶液的合成方法,该方法适合以无基底胶体油墨的形式获得主要为单层的二维半导体MoWS纳米片(NSs),其成分可控。通过高角度环形暗场(HAADF)扫描透射电子显微镜(STEM)结合能量色散X射线光谱(EDXS)进行的原子级结构分析描绘了MoWS纳米片中单个原子的分布,并揭示了畴形成的趋势,特别是在低摩尔分数的钨情况下。这些畴导致相关的整体水平拉曼光谱变宽,证实了从微观尺度到整个样品性质的结构信息外推。通过稳态光谱对MoWS纳米片进行表征表明,可以实现1.89 - 2.02 eV(614 - 655 nm)范围内的带隙调谐以及0.16 - 0.38 eV的自旋轨道耦合相关激子分裂,这使得胶体方法对于扩大低成本合成方法以制备适用于特定应用的胶体TMDCs是可行的。