Wu Yangliu, Zhang Deju, Zhang Yan-Ning, Deng Longjiang, Peng Bo
National Engineering Research Center of Electromagnetic Radiation Control Materials, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China.
Key Laboratory of Multi Spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, People's Republic of China.
Nano Lett. 2024 May 22;24(20):5929-5936. doi: 10.1021/acs.nanolett.3c03970. Epub 2024 Apr 24.
Multiferroic materials provide robust and efficient routes for the control of magnetism by electric fields, which have been diligently sought after for a long time. Construction of two-dimensional (2D) vdW multiferroics is a more exciting endeavor. To date, the nonvolatile manipulation of magnetism through ferroelectric polarization still remains challenging in a 2D vdW heterostructure multiferroic. Here, we report a van der Waals (vdW) heterostructure multiferroic comprising the atomically thin layered antiferromagnet (AFM) CrI and ferroelectric (FE) α-InSe. We demonstrate anomalously nonreciprocal and nonvolatile electric-field control of magnetization by ferroelectric polarization. The nonreciprocal electric control originates from an intriguing antisymmetric enhancement of interlayer ferromagnetic coupling in the opposite ferroelectric polarization configurations of α-InSe. Our work provides numerous possibilities for creating diverse heterostructure multiferroics at the limit of a few atomic layers for multistage magnetic memories and brain-inspired in-memory computing.
多铁性材料为通过电场控制磁性提供了强大而有效的途径，长期以来一直备受关注。构建二维（2D）范德华多铁性材料是一项更令人兴奋的工作。迄今为止，在二维范德华异质结构多铁性材料中，通过铁电极化对磁性进行非易失性操纵仍然具有挑战性。在此，我们报道了一种由原子级薄的层状反铁磁体（AFM）CrI₃和铁电体（FE）α-In₂Se组成的范德华（vdW）异质结构多铁性材料。我们展示了通过铁电极化对磁化强度进行异常的非互易和非易失性电场控制。这种非互易电控制源于α-In₂Se相反铁电极化配置中层间铁磁耦合的有趣反对称增强。我们的工作为在几层原子层的极限下创建用于多级磁存储器和受脑启发的内存计算的各种异质结构多铁性材料提供了众多可能性。
