Yu Chengye, Shan Yufeng, Zhu Jiaqi, Sun Dingyue, Zheng Xiaohong, Zhang Na, Hou Jingshan, Fang Yongzheng, Dai Ning, Liu Yufeng
School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China.
Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, China.
Materials (Basel). 2024 Apr 18;17(8):1864. doi: 10.3390/ma17081864.
Heterojunction semiconductors have been extensively applied in various optoelectronic devices due to their unique carrier transport characteristics. However, it is still a challenge to construct heterojunctions based on colloidal quantum dots (CQDs) due to stress and lattice mismatch. Herein, HgSe/CsPbBrI heterojunctions with type I band alignment are acquired that are derived from minor lattice mismatch (~1.5%) via tuning the ratio of Br and I in halide perovskite. Meanwhile, HgSe CQDs with oleylamine ligands can been exchanged with a halide perovskite precursor, acquiring a smooth and compact quantum dot film. The photoconductive detector based on HgSe/CsPbBrI heterojunction presents a distinct photoelectric response under an incident light of 630 nm. The work provides a promising strategy to construct CQD-based heterojunctions, simultaneously achieving inorganic ligand exchange, which paves the way to obtain high-performance photodetectors based on CQD heterojunction films.
由于其独特的载流子传输特性,异质结半导体已广泛应用于各种光电器件中。然而,由于应力和晶格失配,基于胶体量子点(CQD)构建异质结仍然是一项挑战。在此,通过调节卤化物钙钛矿中Br和I的比例,获得了具有I型能带排列的HgSe/CsPbBrI异质结,其源于较小的晶格失配(约1.5%)。同时,具有油胺配体的HgSe量子点可以与卤化物钙钛矿前驱体交换,从而获得光滑致密的量子点薄膜。基于HgSe/CsPbBrI异质结的光电探测器在630 nm入射光下呈现出明显的光电响应。这项工作为构建基于CQD的异质结提供了一种有前景的策略,同时实现了无机配体交换,为获得基于CQD异质结薄膜的高性能光电探测器铺平了道路。