外延BiFeO₃/LaSrMnO₃异质结构中的铁电电阻开关

Ferroelectric Resistance Switching in Epitaxial BiFeO/LaSrMnO Heterostructures.

作者信息

Qi Hongyan, Wu Weixin, Chen Xinqi

机构信息

Expert Workstation for Terahertz Technology and Advanced Energy Materials and Devices, School of Physics and Mechanical & Electronical Engineering, Hubei University of Education, Wuhan 430205, China.

出版信息

Materials (Basel). 2023 Nov 17;16(22):7198. doi: 10.3390/ma16227198.

DOI:10.3390/ma16227198

PMID:38005127

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC10673057/

Abstract

BiFeO/LaSrMnO (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high-resistance and low-resistance states were estimated based on temperature-dependent current-voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.

摘要

通过脉冲激光沉积在带有金顶电极的（001）取向钛酸锶单晶衬底上成功合成了铋铁氧体/镧锶锰氧化物（BFO/LSMO）外延异质结构。在金/BFO/LSMO异质结构中观察到了由铁电极化反转调节的稳定双极电阻开关特性。揭示了其传导机制遵循肖特基发射模型，并基于温度依赖的电流-电压曲线估计了高电阻和低电阻状态下的肖特基势垒。此外，结合BFO/LSMO界面附近的氧空位迁移，通过铁电极化反转对耗尽区宽度和肖特基势垒高度的调制效应来解释观察到的忆阻行为。