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沿门控多层石墨烯堆叠顺序变化线的金属-半导体行为

Metal-Semiconductor Behavior along the Line of Stacking Order Change in Gated Multilayer Graphene.

作者信息

Jaskólski Włodzimierz

机构信息

Institute of Physics, Faculty of Physics, Astronomy and Informatics, Nicolaus Copernicus University in Toruń, Grudziądzka 5, 87-100 Toruń, Poland.

出版信息

Materials (Basel). 2024 Apr 21;17(8):1915. doi: 10.3390/ma17081915.

DOI:10.3390/ma17081915
PMID:38673272
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11051715/
Abstract

We investigated gated multilayer graphene with stacking order changes along the armchair direction. We consider that some layers cracked to release shear strain at the stacking domain wall. The energy cones of graphene overlap along the corresponding direction in the -space, so the topological gapless states from different valleys also overlap. However, these states strongly interact and split due to atomic-scale defects caused by the broken layers, yielding an effective energy gap. We find that for some gate voltages, the gap states cross and the metallic behavior along the stacking domain wall can be restored. In particular cases, a flat band appears at the Fermi energy. We show that for small variations in the gate voltage, the charge occupying this band oscillates between the outer layers.

摘要

我们研究了沿扶手椅方向具有堆垛顺序变化的门控多层石墨烯。我们认为一些层发生破裂以释放堆垛畴壁处的剪切应变。石墨烯的能量锥在倒易空间中的相应方向上重叠,因此来自不同谷的拓扑无隙态也会重叠。然而,由于破裂层导致的原子尺度缺陷,这些态会强烈相互作用并分裂,从而产生一个有效的能隙。我们发现,对于某些栅极电压,能隙态会交叉,并且沿堆垛畴壁的金属行为可以恢复。在特定情况下,费米能级处会出现一个平带。我们表明,对于栅极电压的微小变化,占据该能带的电荷会在外层之间振荡。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/ea0e1dfc442f/materials-17-01915-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/ec0f14aedfb8/materials-17-01915-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/9038ade9d805/materials-17-01915-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/3675d1204c88/materials-17-01915-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/70555874ee54/materials-17-01915-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/4de2c88067ba/materials-17-01915-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/ea0e1dfc442f/materials-17-01915-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/ec0f14aedfb8/materials-17-01915-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/9038ade9d805/materials-17-01915-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/3675d1204c88/materials-17-01915-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/70555874ee54/materials-17-01915-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/4de2c88067ba/materials-17-01915-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/4a47/11051715/ea0e1dfc442f/materials-17-01915-g006.jpg

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What Makes On-Chip Microdevices Stand Out in Electrocatalysis?是什么让片上微型器件在电催化方面脱颖而出?
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Nanomaterials (Basel). 2021 Jun 13;11(6):1561. doi: 10.3390/nano11061561.
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