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在外延菱面体多层石墨烯中费米能级附近的平坦能带的证据。

Evidence for Flat Bands near the Fermi Level in Epitaxial Rhombohedral Multilayer Graphene.

机构信息

†Laboratoire de Photonique et de Nanostructures (CNRS-LPN), Route de Nozay, 91460 Marcoussis, France.

‡Synchrotron-SOLEIL, Saint-Aubin, BP48, F91192 Cedex Gif sur Yvette, France.

出版信息

ACS Nano. 2015 May 26;9(5):5432-9. doi: 10.1021/acsnano.5b01239. Epub 2015 Apr 24.

Abstract

The stacking order of multilayer graphene has a profound influence on its electronic properties. In particular, it has been predicted that a rhombohedral stacking sequence displays a very flat conducting surface state: the longer the sequence, the flatter the band. In such a flat band, the role of electron-electron correlation is enhanced, possibly resulting in high Tc superconductivity, magnetic order, or charge density wave order. Here we demonstrate that rhombohedral multilayers are easily obtained by epitaxial growth on 3C-SiC(111) on a 2° off-axis 6H-SiC(0001). The resulting samples contain rhombohedral sequences of five layers on 70% of the surface. We confirm the presence of the flat band at the Fermi level by scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy, in close agreement with the predictions of density functional theory calculations.

摘要

多层石墨烯的堆叠顺序对其电子性质有深远的影响。特别是,人们预测菱方堆叠序列显示出非常平坦的导电表面态:序列越长,能带越平坦。在这样的平坦带中,电子-电子相关的作用增强,可能导致高温超导、磁有序或电荷密度波有序。在这里,我们证明了通过在偏离轴 2°的 6H-SiC(0001)上的 3C-SiC(111)外延生长,很容易得到菱方多层。得到的样品有 70%的表面包含五层的菱方序列。我们通过扫描隧道光谱和角分辨光发射光谱证实了费米能级处存在平坦带,与密度泛函理论计算的预测非常吻合。

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