Jili Xiaobing, Gao Libin, Chen Hongwei, Zhang Jihua
School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 610054, China.
State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
Micromachines (Basel). 2024 Mar 29;15(4):470. doi: 10.3390/mi15040470.
Multilayer ceramic capacitors (MLCCs) prepared using BaSrTiO (BST) ceramics exhibit high dielectric constants (~1000), low dielectric loss (<0.01), and high breakdown voltage, with particularly significant tunability in dielectric properties (>50%) and with poor temperature stability. Doping-dominated temperature stability improvements often result in unintended loss of dielectric properties. A non-doping method has been proposed to enhance the temperature stability of BST capacitors. The composite gradient multilayer (CGML) ceramic capacitors with BaSrTiO, where 0.5 < x < 0.8, as the dielectric, were prepared using a tape-casting method and sintered at 1250 °C. There exists a dense microstructure and continuous interface between the BaSrTiO thick film and the Pt electrodes. CGML ceramic capacitors feature a high dielectric constant at 1270, a low dielectric loss of less than 0.007, and excellent frequency and temperature stability. The capacitor showcases remarkable dielectric properties with a substantial tunability of 68% at 100 kV/cm, along with a notably consistent tunability ranging from 20% to 28% at 15 kV/cm across temperatures spanning from 30 to 100 °C, outperforming single-component BST-MLCCs in dielectric performance.
使用钛酸锶钡（BST）陶瓷制备的多层陶瓷电容器（MLCC）具有高介电常数（约1000）、低介电损耗（<0.01）和高击穿电压，其介电性能具有特别显著的可调性（>50%），但温度稳定性较差。以掺杂为主的温度稳定性改善往往会导致介电性能意外损失。有人提出了一种非掺杂方法来提高BST电容器的温度稳定性。采用流延法制备了以0.5<x<0.8的钛酸锶钡为电介质的复合梯度多层（CGML）陶瓷电容器，并在1250℃下烧结。钛酸锶钡厚膜与铂电极之间存在致密的微观结构和连续界面。CGML陶瓷电容器在1270时具有高介电常数、低于0.007的低介电损耗以及优异的频率和温度稳定性。该电容器在100 kV/cm时具有68%的显著可调性，在30至100℃的温度范围内，在15 kV/cm时具有20%至28%的显著一致可调性，展现出卓越的介电性能，在介电性能方面优于单组分BST-MLCC。
