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阻挡层对HR-Si(111)上AlGaN/GaN异质结构输运特性均匀性的影响

The Effect of the Barrier Layer on the Uniformity of the Transport Characteristics of AlGaN/GaN Heterostructures on HR-Si(111).

作者信息

Yan Yujie, Liu Yangbowen, Xiong Guodong, Huang Jun, Yang Bing

机构信息

Hubei Jiufengshan Laboratory, Wuhan 430074, China.

出版信息

Micromachines (Basel). 2024 Apr 16;15(4):536. doi: 10.3390/mi15040536.

DOI:10.3390/mi15040536
PMID:38675347
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC11051904/
Abstract

The high transport characteristics of AlGaN/GaN heterostructures are critical components for high-performance electronic and radio-frequency (RF) devices. We report the transport characteristics of AlGaN/GaN heterostructures grown on a high-resistivity (HR) Si(111) substrate, which are unevenly distributed in the central and edge regions of the wafer. The relationship between the composition, stress, and polarization effects was discussed, and the main factors affecting the concentration and mobility of two-dimensional electron gas (2DEG) were clarified. We further demonstrated that the mechanism of changes in polarization intensity and scattering originates from the uneven distribution of Al composition and stress in the AlGaN barrier layer during the growth process. Furthermore, our results provide an important guide on the significance of accomplishing 6 inch AlGaN/GaN HEMT with excellent properties for RF applications.

摘要

AlGaN/GaN异质结构的高迁移特性是高性能电子和射频（RF）器件的关键组成部分。我们报告了生长在高电阻率（HR）Si(111)衬底上的AlGaN/GaN异质结构的迁移特性，这些特性在晶圆的中心和边缘区域分布不均匀。讨论了成分、应力和极化效应之间的关系，并阐明了影响二维电子气（2DEG）浓度和迁移率的主要因素。我们进一步证明，极化强度和散射变化的机制源于生长过程中AlGaN势垒层中Al成分和应力的不均匀分布。此外，我们的结果为实现用于射频应用的具有优异性能的6英寸AlGaN/GaN高电子迁移率晶体管的重要性提供了重要指导。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/96fb65f542ce/micromachines-15-00536-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/b00682a212c9/micromachines-15-00536-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/ac8dcb21505c/micromachines-15-00536-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/733010a803c9/micromachines-15-00536-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/5e097402c5f8/micromachines-15-00536-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2690ac3f37ba/micromachines-15-00536-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2b24a954db4c/micromachines-15-00536-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2c5911c27534/micromachines-15-00536-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/96fb65f542ce/micromachines-15-00536-g008.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/b00682a212c9/micromachines-15-00536-g001.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/ac8dcb21505c/micromachines-15-00536-g002.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/733010a803c9/micromachines-15-00536-g003.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/5e097402c5f8/micromachines-15-00536-g004.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2690ac3f37ba/micromachines-15-00536-g005.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2b24a954db4c/micromachines-15-00536-g006.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/2c5911c27534/micromachines-15-00536-g007.jpg
https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f39e/11051904/96fb65f542ce/micromachines-15-00536-g008.jpg

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本文引用的文献

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