Hu Haihua, Feng Xiaolong, Pan Yu, Hasse Vicky, Wang Honghui, He Bin, Felser Claudia
Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, Dresden, Germany.
College of Materials Science and Engineering and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 400044, China.
Nat Commun. 2025 Jan 2;16(1):119. doi: 10.1038/s41467-024-55490-6.
Charge-carrier compensation in topological semimetals amplifies the Nernst signal and simultaneously degrades the Seebeck coefficient. In this study, we report the simultaneous achievement of both a large Nernst signal and an unsaturating magneto-Seebeck coefficient in a topological nodal-line semimetal TaAs single crystal. The unique dual-high transverse and longitudinal thermopowers are attributed to multipocket synergy effects: the combination of a strong phonon-drag effect and the two overlapping highly dispersive conduction and valence bands with electron-hole compensation and high mobility, promising a large Nernst effect; the third Dirac band causes a large magneto-Seebeck effect. High transverse and longitudinal power factors of ~3100 and ~50 μW cm K, respectively, are achieved, surpassing those of other topological semimetals and mainstream semiconductors. Our study presents a feasible approach for optimizing the longitudinal and transverse thermopowers in topological semimetals simultaneously and demonstrates the potential of TaAs for low temperature solid-state cooling.
拓扑半金属中的载流子补偿会放大能斯特信号,同时降低塞贝克系数。在本研究中,我们报道了在拓扑节线半金属TaAs单晶中同时实现大的能斯特信号和不饱和磁塞贝克系数。独特的双高横向和纵向热功率归因于多口袋协同效应:强声子拖拽效应与两个重叠的高色散导带和价带相结合,具有电子 - 空穴补偿和高迁移率,有望产生大的能斯特效应;第三个狄拉克带导致大的磁塞贝克效应。分别实现了约3100和约50 μW cm K的高横向和纵向功率因子,超过了其他拓扑半金属和主流半导体。我们的研究提出了一种同时优化拓扑半金属纵向和横向热功率的可行方法,并展示了TaAs在低温固态冷却方面的潜力。